1/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b 4v drive pch+pch mosfet sh8j65 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) sh8j65 tb 2500 type ? absolute maximum ratings (ta=25 ? c) ? 1 ? 2 ? 1 parameter v v dss symbol ? 30 v v gss 20 a i d 7.0 a i dp 28 a i s ? 1.6 a i sp ? 28 w / total p d 2.0 w / element 1.4 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current source current (body diode) total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board each lead has same dimensions sop8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4)
2/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds = 0v v dd ? 15v typ. max. unit conditions gate-source leakage v (br) dss ? 30 ?? vi d = ? 1ma, v gs = 0v drain-source breakdown voltage i dss ??? 1 av ds = ? 30v, v gs = 0v zero gate voltage drain current v gs (th) ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma gate threshold voltage ? 21.5 29.0 i d = ? 7a, v gs = ? 10v static drain-source on-state resistance r ds (on) ? 29.0 39.0 m m m i d = ? 3.5a, v gs = ? 4.5v forward transfer admittance ? 31.0 40.8 i d = ? 3.5a, v gs = ? 4.0v input capacitance 6.0 ?? sv ds = ? 10v, i d = ? 7a output capacitance c iss ? 1200 ? pf v ds = ? 10v reverse transfer capacitance c oss ? 170 170 ? pf v gs = 0v turn-on delay time c rss ? 12 ? pf f = 1mhz rise time t d (on) ? 40 ? ns turn-off delay time t r ? 80 ? ns fall time t d (off) ? 65 ? ns t f ? 18 ? ns q g ? 3.5 ? nc q gs ? 6.5 ? nc v gs = ? 5v r l = 2.1 / r g = 10 q gd ?? nc i d = ? 7a ? pulsed ? ? ? ? ? ? ? ? ? ? ? ? total gate charge gate-source charge gate-drain charge v dd ? 15 v i d = ? 3.5a v gs = ? 10v r l = 4.3 r g = 10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ??? 1.2 v i s = ? 7a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ?
3/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? electrical characteristic curves 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 v gs = -2.5v ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -3.5v v gs = -3.0v 0.01 0.1 1 10 1.0 1.5 2.0 2.5 3.0 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 1 10 100 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = -10v ta=25c pulsed 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 2 4 6 8 10 12 14 16 18 20 0246810 v gs = -2.2v v gs = -2.5v ta=25c pulsed v gs = -10v v gs = -4.0v v gs = -3.0v 1 10 100 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 1 10 100 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 10 100 0.1 1.0 10.0 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 1 10 100 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : - i d [a] drain current : - i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v]
4/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 10 20 30 40 50 60 70 80 90 100 051015 ta=25c pulsed i d = -3.5a i d = -7.0a 0 2 4 6 8 10 0 10 203040 ta=25c v dd = -15v i d = -7.0a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms t a = 25c single pulse mo unt ed o n serami c bo ard dc operat ion operation in this area is limited by r ds(on) (v gs =-10v) p w = 100us p w =1ms 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient therma l resistance : r (t) ta = 25c single pulse : 1unit rth(c h-a)(t) = r(t)rth(c h-a) rth(c h-a) = 89.3 c/w 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d (on) t d (off) ta= 25c v dd = -15v v gs =-10v r g =10 ? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig .12 dynamic input characteristics fig .13 typical capacitance vs. drain-source voltage fig .11 switching char acter istics fig.14 maximum safe operating aera fig .15 nor malized tr ansient ther mal resistance vs. pulse width static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] gate-source voltage : -v ds [v] capacitance : c [pf] drain-source voltage : -v ds [v] drain current : -i d (a)
5/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? measurement circuits fig.16 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.17 switching time waveforms 90% 90% 90% 10% 10% 10% 50% 50% v gs v ds t on t off t r t d(on) t f t d(off) pulse width fig.18 gate charge test circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.19 gate charge waveform v g v gs charge q g q gs q gd
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