unisonic technologies co., ltd USS5350 preliminary pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r223-005.c 50v,3a pnp low v ce(sat) transistor ? features * low collector-emitter saturation voltage v ce(sat) * high collector current capability: i c and i cm * higher efficiency leading to less heat generation * reduced printed-circuit board requirements. * complement: uss4350. sot-89 1 sot-223 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing USS5350l-ab3-r USS5350g-ab3-r sot-89 b c e tape reel USS5350l-aa3-r USS5350g-aa3-r sot-223 b c e tape reel USS5350l-ab3-r (1)packing type (2)package type (3)lead free (1) r: tape reel (2) aa3: sot-223, ab3: sot-89 (3) g: halogen free, l: lead free
USS5350 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r223-005.c ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v dc i c -3 a collector current (note 3) peak i cm -5 a base current (dc) i b -0.5 a sot-89 1.4 power dissipation ( t a 25c) (note 2) sot-223 p d 2 w junction temperature t j 150 c storage temperature t stg -65~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device mounted on a printed-circuit board; single-sided copper; mounting pad for collector 6cm 2 . 3. pulse test: t p 300 s; duty cycle 2%. ? thermal characteristics parameter symbol ratings unit sot-89 90 junction to ambient (note 2) sot-223 ja 62.5 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit v cb = -50 v, i e = 0 -100 na collector cut-off current i cbo v cb = -50 v, i e = 0, t j = 150c -50 a collector cut-off current i ces v ce = -50 v, v be = 0 -100 na emitter cut-off current i ebo v eb = -5 v, i c = 0 -100 na i c = -0.5 a, i b = -50 ma -90 mv i c = -1 a, i b = -50 ma -180 mv i c = -2 a, i b = -100 ma -320 mv i c = -2 a, i b = -200 ma (note) -270 mv collector-emitter satu ration voltage v ce(sat) i c = -3 a, i b = -300 ma (note) -390 mv i c = -2 a, i b = -100 ma -1.1 v base-emitter satura tion voltage v be(sat) i c = -3 a, i b = -300 ma (note) -1.2 v base-emitter turn -on voltage v be(on) v ce = -2 v, i c = -1 a -1.1 v v ce =-2v, i c = -0.1 a 200 v ce =-2v, i c =-0.5 a 200 v ce =-2v, i c = -1 a (note) 200 450 v ce =-2v, i c = -2 a (note) 130 dc current gain h fe v ce =-2v, i c = -3 a (note) 80 equivalent on-resistance r ce(sat) i c = -2 a, i b = -200 ma, (note) 90 135 m ? transition frequency f t v ce = -5 v , i c = -100 ma, f= 100 mhz 100 mhz collector capacitance c c v cb = -10 v, i e = i e = 0, f = 1 mhz 35 pf note: pulse test: t p 300 s; duty cycle 2%.
USS5350 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r223-005.c ? typical characteristics collector current, i c (a) collector current, i c (a) 0 emitter current vs. emitter-base voltage emitter current, i e (a) 2 4 6 810 12 emitter-base voltage, v ebo (v) 0 2 4 6 8 10 12 14 14 collector current, i c (a) 1.5 2.0 2.5 3.0 4.0 0 0.5 1.0 1.5 2.0 2.5 0.5 3.5 1.0 3.0 0 i b =1.34ma collector current vs. collector-emitter voltage collector-emitter voltage, v ce (v) i b =3.34ma i b =5.34ma i b =7.34ma i b =9.34ma i b =11.34ma utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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