BCW89 surface mount pnp silicon transistor description: the central semiconductor BCW89 is a silicon pnp transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose applications. marking code: h3 maximum ratings: (t a =25c) symbol units collector-emitter voltage v ceo 60 v collector-emitter voltage v ces 60 v emitter-base voltage v ebo 5.0 v continuous collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =20v 100 na i cbo v cb =20v, t a =100c 10 a bv cbo i c =10a 80 v bv ceo i c =2.0ma 60 v bv ces i c =10a 60 v bv ebo i c =10a 5.0 v v ce(sat) i c =10ma, i b =0.5ma 300 mv v be(on) v ce =5.0v, i c =2.0ma 600 750 mv h fe v ce =5.0v, i c =2.0ma 120 260 nf v ce =5.0v, i c =200a, r s =2.0k f=1.0khz, b=200hz 10 db sot-23 case r1 (20-november 2009) www.centralsemi.com
BCW89 surface mount pnp silicon transistor lead code: 1) base 2) emitter 3) collector sot-23 case - mechanical outline marking code: h3 www.centralsemi.com r1 (20-november 2009)
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