ss2h9 & ss2h10 vishay general semiconductor document number: 88750 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 high-voltage surface mount schottky rectifier high barrier technology for improved high tem perature performance features ? low profile package ? guardring for overvoltage protection ? ideal for automated placement ? low power losses, high efficiency ? low forward voltage drop ? low leakage current ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214aa (smb) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 2.0 a v rrm 90 v, 100 v i fsm 75 a v f 0.65 v i r 10 a t j max. 175 c do-214aa (smb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss2h9 ss2h10 unit device marking code ms9 ms10 maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at: t l = 130 c i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 75 a peak repetitive reverse surge current at t p = 2.0 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c
ss2h9 & ss2h10 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88750 revision: 19-may-08 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note: (1) units mounted on p.c.b. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss2h9 ss2h10 unit maximum instantaneous forward voltage (1) i f = 2.0 a i f = 2.0 a t j = 25 c t j = 125 c v f 0.79 0.65 v maximum reverse current at rated v r (2) t j = 25 c t j = 125 c i r 10 4 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss2h9 ss2h10 unit maximum thermal resistance junction to lead t l = 25 c (1) r ja r jl 80 25 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss2h9-e3/52t 0.096 52t 750 7" diameter plastic tape and reel ss2h9-e3/5bt 0.096 5bt 3200 13" diameter plastic tape and reel ss2h9he3/52t (1) 0.096 52t 750 7" diameter plastic tape and reel ss2h9he3/5bt (1) 0.096 5bt 3200 13" diameter plastic tape and reel figure 1. forward current derating curve 0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 a v erage for w ard c u rrent (a) t l - lead temperat u re (c) figure 2. max non-repetitive peak forward surge current 0 25 50 75 100 1 10 100 a v erage for w ard c u rrent (a) nu m b er of cycles at 60 hz
ss2h9 & ss2h10 vishay general semiconductor document number: 88750 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instanteous forward characteristics figure 4. typical reve rse characteristics 100 10 1 0.1 0.01 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c t j = 125 c t j = 175 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 10 20 30 40 50 60 70 8 0 90 100 10 000 1000 100 10 1 0.1 0.01 0.001 t j = 150 c t j = 125 c t j = 175 c t j = 25 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance per leg 1000 100 10 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) 100 10 1 transient thermal impedance (c/ w ) 0.01 0.1 1 10 100 t - p u lse d u ration (s) cathode band do-214aa (smb) 0.0 8 6 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.1 8 0 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.0 8 4 (2.13) mountin g pad layout 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n . 0.0 8 5 (2.159) max. 0.220 ref.
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