2008-07-04 1 BFR720L3RH 2 3 1 npn silicon germanium rf transistor target data sheet ? high gain ultra low noise rf transistor for low current operation ? provides outstanding performance for a wide range of wireless applications up to 10 ghz and more ? optimum gain and noise figure at low current operation ? ideal for wlan applications ? outstanding noise figure f = 0.5 db at 1.8 ghz outstanding noise figure f = 0.8 db at 6 ghz ? high maximum stable and available gain g ms = 24 db at 1.8 ghz, g ma = 16.5 db at 6 ghz ? 150 ghz f t -silicon germanium technology ? extremly small and flat leadless package height 0.32 mm max. ? pb-free (rohs compliant) package ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR720L3RH r3 1 = b 2 = c 3 = e tslp-3-9
2008-07-04 2 BFR720L3RH maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 20 ma base current i b 2 total power dissipation 1) t s tbd p tot 80 mw operating junction temperature range t j o -65 ... 150 c storage junction temperature range t j st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs tbd k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 2 a dc current gain- i c = 13 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2008-07-04 3 BFR720L3RH electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 13 ma, v ce = 3 v, f = 1 ghz f t - 45 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.07 - pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , based grounded c ce - 0.26 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.27 - noise figure i c = 5 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 3 v, f = 6 ghz, z s = z sopt nf - - 0.5 0.8 - - db power gain 1) i c = 13 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 24 - db power gain, maximum available 1) i c = 13 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 16.5 - db transducer gain i c = 13 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 - - 22 13.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 10 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 20.5 - dbm 1db compression point i c = 13 ma, v ce = 3 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 6 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2008-07-04 4 BFR720L3RH package tslp-3-9 package outline foot print marking layout (example) 2 3 1 pin 1 top view bottom view 2 1 0.035 0.5 3 0.575 1) 0.035 0.4 1) 0.035 2x 0.25 1) 0.35 0.035 2 x 0.15 1) marking 1) dimension applies to plated terminal 0.31 -0.02 +0.01 0.05 0.05 0.05 1 0.6 0.05 reel ?180 mm = 15.000 pieces/reel standard packing bfr705l3rh type code pin 1 marking laser marking 0.8 4 1.2 0.35 pin 1 marking 8 for board assembly information please refer to infineon website "packages" stencil apertures copper solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 r0.1 r0.19
2008-07-04 5 BFR720L3RH edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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