SI4800DY vishay siliconix document number: 70856 s-31062?rev. b, 26-may-03 www.vishay.com 1 n-channel reducded q g , fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0185 @ v gs = 10 v 9 30 0.033 @ v gs = 4.5 v 7 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d d s s ordering information: SI4800DY SI4800DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 9 continuous drain current (t j = 150 c) a, b t a = 70 c i d 7 a pulsed drain current (10 s pulse width) i dm 40 a continuous source current (diode conduction) a, b i s 2.3 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a, b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient (mosfet) a t 10 sec r 50 c/w maximum junction-to-ambient (mosfet) a steady state r thja 70 c/w notes a. surface mounted on fr4 board. b. t 10 sec.
SI4800DY vishay siliconix www.vishay.com 2 document number: 70856 s-31062?rev. b, 26-may-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 9 a 0.0155 0.0185 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 7 a 0.0275 0.033 forward transconductance a g fs v ds = 15 v, i d = 9 a 16 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.71 1.2 v dynamic b total gate charge q g 8.7 13 gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 9 a 2.25 nc gate-drain charge q gd 4.2 gate resistance r g 0.5 1.5 2.6 turn-on delay time t d(on) 11 16 rise time t r v dd = 15 v, r l = 15 8 15 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 22 30 ns fall time t f 9 15 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI4800DY vishay siliconix document number: 70856 s-31062?rev. b, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 8 16 24 32 40 012345 - on-resistance ( r ds(on) ) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 8 16 24 32 40 0246810 0 2 4 6 8 10 0 3 6 9 12 15 0.00 0.03 0.06 0.09 0.12 0.15 0 8 16 24 32 40 v gs = 10 thru 5 v t c = 125 c -55 c v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 9 a i d - drain current (a) v gs = 10 v i d = 9 a v gs = 10 v v gs = 4.5 v 3 v 25 c 4 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) )
SI4800DY vishay siliconix www.vishay.com 4 document number: 70856 s-31062?rev. b, 26-may-03 typical characteristics (25 c unless noted) 0.01 0 1 25 30 10 15 10 30 0.1 time (sec) 0.00 0.04 0.08 0.12 0.16 0.20 0246810 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c t j = 25 c i d = 9 a 50 10 1 threshold v oltage source-drain diode forward v oltage on-resistance vs. gate-to-source voltage single pulse power - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s 5 20 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature ( c) power (w)
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