ipb77n06s2-12 IPP77N06S2-12 opti mos ? power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (lead free) ? ultra low rds(on) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c, v gs =10 v 77 a t c =100 c, v gs =10 v 2) 56 pulsed drain current 2) i d,pulse t c =25 c 308 avalanche energy, single pulse 2) e as i d = 77 a 280 mj gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 158 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 55 v r ds(on),max (smd version) 11.7 m ? i d 77 a product summary pg-to220-3-1 pg-to263-3-2 type package ordering code marking ipb77n06s2-12 pg-to263-3-2 sp0002-18173 2n0612 IPP77N06S2-12 pg-to220-3-1 sp0002-18172 2n0612 rev. 1.0 page 1 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 0.95 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 55 - - v gate threshold voltage v gs(th) v ds = v gs , i d =93 a 2.1 3.0 4.0 zero gate voltage drain current i dss v ds =55 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =55 v, v gs =0 v, t j =125 c 2) - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =38 a, - 9.8 12.0 m ? v gs =10 v, i d =38 a, smd version - 9.5 11.7 values rev. 1.0 page 2 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 1770 - pf output capacitance c oss - 460 - reverse transfer capacitance c rss - 120 - turn-on delay time t d(on) -14-ns rise time t r -27- turn-off delay time t d(off) -34- fall time t f -26- gate char g e characteristics 2) gate to source charge q gs - 9 12 nc gate to drain charge q gd -1828 gate charge total q g -4560 gate plateau voltage v plateau - 5.6 - v reverse diode diode continous forward current 2) i s - - 77 a diode pulse current 2) i s,pulse - - 308 diode forward voltage v sd v gs =0 v, i f =77 a, t j =25 c - 0.9 1.3 v reverse recovery time 2) t rr v r =30 v, i f = i s , d i f /d t =100 a/s -4560ns reverse recovery charge 2) q rr -6480nc 2) defined by design. not subject to production test. 3) see diagram 13. 4) qualified at -20v and +20v. 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by die area; with an r thjc = 0.95 k/w the chip is able to carry 77 a at 25c. for detailed information see application note anps071e at www.infineon.com/optimos t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =30 v, v gs =10 v, i d =77 a, r g =6.2 ? v dd =44 v, i d =77 a, v gs =0 to 10 v rev. 1.0 page 3 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] rev. 1.0 page 4 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d = f( v gs ); v ds = 6v g fs = f( i d ); t j = 25c parameter: t j parameter: g fs 4.5 v 5 v 5.5 v 6 v 7 v 10 v 0 50 100 150 200 250 300 0246810 v ds [v] i d [a] 5 v 5.5 v 6 v 8 v 10 v 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 i d [a] r ds(on) [m ? ] -55 c 25 c 175 c 0 20 40 60 80 100 120 23456 v gs [v] i d [a] 0 25 50 75 100 125 150 0 50 100 150 200 i d [a] g fs [s] rev. 1.0 page 5 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 9 typ. drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) = f( t j ) v gs(th) = f( t j ); v gs = v ds parameter: i d = 80 a; v gs = 10 v parameter: i d 11 typ. capacitances 12 typical forward diode characteristicis c = f( v ds ); v gs = 0 v; f = 1 mhz if = f(v sd ) parameter: t j 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 v ds [v] c [pf] 93 a 465 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] 4 6 8 10 12 14 16 18 20 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] rev. 1.0 page 6 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 13 typical avalanche energy 14 typ. gate charge e as = f( t j ) v gs = f( q gate ); i d = 80 a pulsed parameter: i d 15 typ. drain-source breakdown voltage 16 gate charge waveforms v br(dss) = f( t j ); i d = 1 ma 40 a 50 a 77 a 0 100 200 300 400 500 600 0 50 100 150 200 t j [c] e as [mj] v gs q gate q gs q gd q g v gs q gate q gs q gd q g 11 v 44 v 0 2 4 6 8 10 12 0204060 q gate [nc] v gs [v] 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] rev. 1.0 page 7 2005-12-27
ipb77n06s2-12 IPP77N06S2-12 published by infineon technologies ag st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office (www.infineon.com) warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2005-12-27
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