unisonic technologies co., ltd UT30P04 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-465 .b p-channel enhancement mode power mosfet ? description the utc UT30P04 is a p-channel enhancement mode power mosfet, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with utc?s advanced technology. ? features * low on-resistance * fast switching speed ? symbol g d s ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT30P04l-tn3-r UT30P04g-tn3-r to-252 g d s tape reel note: g:gate, d:drain, s:source
UT30P04 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-465 .b ? absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v t c =25c -21 continuous drain current t c =70c i d -17 pulsed drain current (note 2) i dm -70 avalanche current i as -27 a avalanche energy (note 3) l=0.1mh e as 36 mj t c =25c 30 power dissipation t c =70c p d 20 w operating junction temperature t j -55~150 c storage temperature t stg -55~150 c note:1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by maxi mum junction temperature. 3. v dd =-20v. starting t j =25c. ? thermal data parameter symbol ratings unit junction to ambient ja 40 c/w junction to case jc 4.1 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -40 v v ds =-32v, v gs =0v 1 drain-source leakage current i dss v ds =-30v, v gs =0v, t j =125c 10 a gate- source leakage current i gss v ds =0v, v gs =20v 250 na on-state drain current (note 1) i d(on) v ds =-5v, v gs =-10v -70 a on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -2.5 -3 v v gs =-5v, i d =-8a 65 73 v gs =-7v, i d =-8a 35 50 static drain-source on-state resistance (note 1) r ds(on) v gs =-10v, i d =-10a 30 40 m ? forward transconductance (note 1) g fs v ds =-10v, i d =-10a 20 s gate resistance r g v gs =0v, v ds =0v, f=1.0mhz 4.95 ? dynamic parameters input capacitance c iss 1090 output capacitance c oss 175 reverse transfer capacitance c rss v gs =0v, v ds =-20v, f=1.0mhz 91 pf switching parameters (note 2) q g (v gs =-10v) 17 total gate charge q g (v gs =-4.5v) 8.5 gate to source charge q gs 5.5 gate to drain charge q gd v ds =0.5v (br)dss , i d =-18a 3 nc turn-on delay time t d(on) 6 ns rise time t r 16 ns turn-off delay time t d(off) 26 ns fall-time t f v gs =-10v, v ds =-20v, i d -10a, r gs =6 ? , r l =2 ? 10 ns source- drain diode ratings and characteristics continuous current i s -21 a drain-source diode forward voltage 1 v sd i f =-10a, v gs =0v -1.2 v reverse recovery time t rr 15.5 ns reverse recovery charge q rr i f =-10a, di f /dt=100a/s 7.9 nc note: 1. pulsde test: pulse width 300sec, duty cycle 2%. 2. independent of oper ating temperature.
UT30P04 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-465 .b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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