ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 TAN15 15 watts, 40 volts, pulsed avionics 960 - 1215 mhz general description the TAN15 is a common base bipolar transistor. it is designed for pulsed systems in the frequency band 960-1215 mhz. the device has gold thin-film metallization and diffused ballasting for proven highest mttf. the transistor includes input prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. case outline 55lt, style 1 absolute maximum ratings maximum power dissipation @ 25 c 175 watts o2 maximum voltage and current bvces collector to base voltage 50 volts bvebo emitter to base voltage 4.0 volts ic collector current 2.0 amps 2 maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power out power input power gain collector efficiency load mismatch tolerance f = 960-1215 mhz vcc = 40 volts pw = 20 m sec df = 5% f = 1090 mhz 15 7.0 8.0 40 3.0 10:1 watts watts db % bvebo bvces h fe q jc 2 emitter to base breakdown collector to emitter breakdown dc - current gain thermal resistance ie = 5 ma ic = 10 ma ic = 10 ma, vce = 5 v 3.5 50 1.0 volts volts c/w o note 1: at rated output power and pulse conditions 2: at rated pulse conditions issue december 1995
TAN15
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