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  unisonic technologies co., ltd ut30p03 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-335.a p-channel enhancement mode ? features * r ds(on) = 40m ? @ v gs =-10 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified * halogen free ? symbol 1.gate 3.source 2.drain to-252 1 ? ordering information pin assignment ordering number package 1 2 3 packing UT30P03G-TN3-R to-252 g d s tape reel
ut30p03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-335.a ? absolute maximum ratings (ta=25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -26 a power dissipation p d 50 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250 a -30 v drain-source leakage current i dss v ds =-30v, v gs =0v -1 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -1 -3 v v gs =-10v, i d =-10a 30 40 m ? static drain-source on-state resistance (note) r ds(on) v gs =-4.5v, i d =-10a 40 60 m ? dynamic characteristics input capacitance c iss 700 pf output capacitance c oss 130 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1.0mhz 120 pf switching characteristics turn-on delay time t d(on) 25 ns turn-on rise time t r 50 ns turn-off delay time t d(off) 380 ns turn-off fall time t f v ds =-15v, i d =1a, r l = 15 ? , v gs =-10v, r g =3.3 ? 180 ns total gate charge q g 100 nc gate-source charge q gs 15 nc gate-drain charge q gd v ds = -24v, i d = -30a, v gs = -4.5v 10 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s =-10a -1.2 v maximum continuous drain-source diode forward current i s -26 a note: pulse test: pulse width 300 s, duty cycle 2%
ut30p03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-335.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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