1 motorola tmos power mosfet transistor device data
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nchannel enhancementmode silicon gate this advanced high voltage tmos efet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a draintosource diode with fast recovery time. designed for high voltage, high speed switching applications such as power supplies, pwm motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. ? avalanche energy capability specified at elevated temperature ? internal sourcetodrain diode designed to replace external zener transient suppressor absorbs high energy in the avalanche mode ? sourcetodrain diode recovery time comparable to discrete fast recovery diode maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 250 vdc draintogate voltage, r gs = 1.0 m v dgr 250 vdc gatetosource voltage e continuous v gs 20 vdc gatetosource voltage e single pulse (tp 50 s) v gsm 40 vdc drain current e continuous @ t c = 25 c drain current e continuous @ t c = 100 c drain current e single pulse (tp 10 s) i d i d i dm 2.0 0.6 7.0 adc apk total power dissipation @ t c = 25 c derate above 25 c total p d @ t a = 25 c mounted on 1 sq. drain pad on fr4 bd. material total p d @ t a = 25 c mounted on 0.7 sq. drain pad on fr4 bd. material total p d @ t a = 25 c mounted on min. drain pad on fr4 bd. material p d 0.77 6.2 1.0 1.2 0.8 watts mw/ c watts operating and storage temperature range t j , t stg 55 to 150 c unclamped draintosource avalanche characteristics (t j < 150 c) single pulse draintosource avalanche energy e starting t j = 25 c (v dd = 80 v, v gs = 10 v, peak i l = 4.0 apk, l = 3.0 mh, r g = 25 w ) e as 26 mj thermal characteristics e junctiontoambient on 1 sq. drain pad on fr4 bd. material e junctiontoambient on 0.7 sq. drain pad on fr4 bd. material e junctiontoambient on min. drain pad on fr4 bd. material r q ja 90 103 162 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c this document contains information on a product under development. motorola reserves the right to change or discontinue this product without notice. tmos is a registered trademark of motorola, inc. efet is a trademark of motorola, inc. order this document by mmft2n25e/d
semiconductor technical data ? motorola, inc. 1997
tmos power fet 2.0 amperes 250 volts r ds(on) = 3.5 case 318e04, style 3 to261aa ? d s g 2,4 3 1 1 2 3 4
2 motorola tmos power mosfet transistor device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0, i d = 0.25 ma) temperature coefficient (positive) bv dss 250 e e 324 e e vdc v/ c zero gate voltage drain current (v ds = 250 v, v gs = 0) (v ds = 250 v, v gs = 0, t j = 125 c) i dss e e e e 10 100 m adc gatebody leakage current (v gs = 20 v, v ds = 0) i gss e e 100 nadc on characteristics (1) gate threshold voltage (v ds = v gs , i d = 0.25 ma) threshold temperature coefficient (negative) v gs(th) 2.0 e 2.8 5.7 4.0 e vdc mv/ c static draintosource onresistance (v gs = 10 v, i d = 1.0 adc) r ds(on) e 2.1 3.5 ohms draintosource onvoltage (v gs = 10 v, i d = 2.0 a) (v gs = 10 v, i d = 1.0 a, t j = 125 c) v ds(on) e e e e 8.40 7.35 vdc forward transconductance (v ds = 8.0 v, i d = 2.0 adc) g fs 0.44 1.2 e mhos dynamic characteristics input capacitance ( v ds = 25 v , c iss e 137 190 pf output capacitance (v ds = 25 v , v gs = 0, f 1 0 mhz) c oss e 30 40 transfer capacitance f = 1.0 mhz) c rss e 7.0 10 switching characteristics (1) turnon delay time (v ds = 125 v t d(on) e 9.2 20 ns rise time (v ds = 125 v , i d = 2.0 a, t r e 6.6 10 turnoff delay time d , r g = 9.1 ohms, v gs =10v) t d(off) e 13 30 fall time v gs = 10 v) t f e 8.5 20 gate charge (v 200 v q t e 4.7 10 nc (v ds = 200 v, i d =20a q 1 e 1.3 e i d = 2 . 0 a , v gs = 10 v) q 2 e 3.2 e gs ) q 3 e 2.3 e sourcedrain diode characteristics forward onvoltage i s = 2.0 a, v gs = 0 v v sd e 0.94 2.0 vdc i s = 2.0 a, v gs = 0 v, t j = 125 c v sd e 0.83 e reverse recovery time (i 2 0 a t rr e 104 e ns (i s = 2.0 a, t a e 63 e ( s , dl s /dt = 100 a/ m s) t b e 41 e reverse recovery stored charge q rr e 0.365 e c (1) pulse test: pulse width 300 m s, duty cycle 2%.
3 motorola tmos power mosfet transistor device data 9.0 v figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus drain current and temperature figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation versus temperature figure 6. draintosource leakage current versus voltage 20 0 v ds , draintosource voltage (volts) 3.0 2.5 2.0 1.5 1.0 v gs , gatetosource voltage (volts) 6.0 7.5 3.0 2.0 1.0 0.5 0 3.0 4.0 0 i d , drain current (amps) 7.0 4.0 3.0 2.0 1.0 0 i d , drain current (amps) 1.0 0 6.0 4.0 3.0 2.0 1.0 0 1.5 25 25 50 t j , junction temperature ( c) 2.0 1.5 1.0 0.5 0 v ds , draintosource voltage (volts) 50 0 100 10 1.0 100 0 i d , drain current (amps) r ds(on) , draintosource resistance (ohms) 0.5 0 10 5.0 15 t j = 25 c 6.5 7.0 3.5 4.0 4.5 5.0 5.5 1.5 2.5 3.0 1.0 2.0 2.0 2.5 3.0 3.5 4.0 , draintosource resistance (normalized) r ds(on) 50 75 100 2.5 200 250 150 i dss , leakage (na) 4.0 3.5 i d , drain current (amps) 3.5 4.0 0.5 5.0 r ds(on) , draintosource resistance (ohms) 5.0 6.0 125 150 v gs = 10 v 5.0 v 6.0 v 7.0 v 8.0 v v ds 10 v 55 c 25 c t j = 100 c v gs = 10 v t j = 100 c 55 c 25 c v gs = 10 v 15 v t j = 25 c v gs = 0 v 100 c t j = 125 c v gs = 10 v i d = 1.0 a
4 motorola tmos power mosfet transistor device data t d(on) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 25 10 gatetosource or draintosource voltage (volts) 300 250 200 150 100 q g , total gate charge (nc) 6.0 10 0 6.0 2.0 0 100 r g , gate resistance (ohms) 100 10 1.0 v sd , sourcetodrain voltage (volts) 0.5 0.3 2.0 1.0 0.5 0 0.6 0.1 v ds , draintosource voltage (volts) 1.0 0.1 0.01 0.001 t j , starting junction temperature ( c) 50 25 60 10 0 75 1.0 c, capacitance (pf) i s , source current (amps) 50 0 10 5.0 15 t j = 25 c 8.0 2.0 4.0 4.0 8.0 10 1.0 10 0.7 0.8 0.9 1.0 , drain current (amps) i d 10 100 10 125 150 100 e as , single pulse draintosource 350 v gs , gatetosource voltage (volts) 12 0.4 1.5 t, time (ns) 1000 020 5.0 v gs = 0 v v ds = 0 v c iss c rss c iss c rss c oss t j = 25 c i d = 2.0 a q3 q2 q1 qt v ds v gs t j = 25 c i d = 2.0 a v dd = 125 v v gs = 10 v t d(off) t f t r t j = 25 c v gs = 0 v v gs = 20 v single pulse t c = 25 c 100 s 1.0 ms 10 ms dc r ds(on) limit thermal limit package limit avalanche energy (mj) 20 30 40 50 i d = 2.0 a 250 200 150 100 50 0 v ds , draintosource voltage (volts) v ds v gs
5 motorola tmos power mosfet transistor device data figure 13. thermal response 1.0e1 1.0e5 t, time (seconds) 0.1 0.01 r(t), effective transient thermal 0.001 1.0e4 1.0e3 1.0 1.0e2 1.0e+2 1.0e+0 1.0e+1 1.0e+3 resistance (normalized) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot223 0.079 2.0 0.15 3.8 0.248 6.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 0.091 2.3 0.091 2.3 mm inches
6 motorola tmos power mosfet transistor device data package dimensions case 318e04 issue h h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 3: pin 1. gate 2. drain 3. source 4. drain motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mmft2n25e/d ?
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