bys11-90 document number 86014 15-aug-05 vishay general semiconductor www.vishay.com 1 do-214ac (sma) surface mount schottky barrier rectifier major ratings and characteristics i f(av) 1.5 a v rrm 90 v i fsm 40 a v f 0.75 v t j max. 150 c features low profile package ideal for automated placement guardring for overvoltage protection low power losses, high efficiency very low switching losses high surge capability meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high frequency inverters, switching power supplies, freewheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. mechanical data case: do-214ac (sma) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes the cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol bys11-90 unit device marking code bys 109 maximum repetitive peak reverse voltage v rrm 90 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load at 8.3 ms at 10 ms i fsm 40 30 a voltage rate of change (rated v r ) dv/dt 10000 v/s junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 86014 15-aug-05 bys11-90 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol bys11-90 unit maximum instantaneous forward voltage at 1.0 a (1) v f 750 mv maximum dc reverse current at v rrm (1) t j = 25 c t j = 100 c i r 100 1 a ma parameter symbol bys11-90 unit maximum thermal resistance - junction lead r jl 25 c/w maximum thermal resistance - junction ambient r ja 150 (1) 125 (2) 100 (3) c/w figure 1. forward current vs. forward voltage 10.000 1.000 0.100 0.010 0.001 t j = 150 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 v f - for w ard v oltage ( v ) i f - for w ard c u rrent (a) figure 2. max. average forward current vs. ambient temperature i fa v - a v erage for w ard c u rrent (a) t am b - am b ient temperat u re (c) 040 8 0 120 160 200 2.0 1.6 1.2 0. 8 0.4 0.0 v r = v rrm , half sine w a v e, r thja = 25 k/ w
bys11-90 document number 86014 15-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. max. aver age forward current vs. ambient temperature figure 4. reverse current vs . junction temperature v r = 0 v , half sine w a v e r thja = 25 k/ w 100 k/ w 125 k/ w 150 k/ w 040 8 0 120 160 200 2.0 1.6 1.2 0. 8 0.4 0 t am b - am b ient temperat u re (c) i fa v - a v erage for w ard c u rrent (a) v r = v rrm 040 8 0 120 160 200 t j - j u nction temperat u re (c) i r - re v erse c u rrent (ma) 1000 100 10 1 0.1 figure 5. max reverse power dissipation vs. junction temperature figure 6. diode capacitance vs. reverse voltage r thja = 25 k/ w 100 k/ w v r = v rrm 040 8 0 120 100 200 2.0 1.6 1.2 0. 8 0.4 0 p r - max. re v erse po w er dissipation ( w ) t j - j u nction temperat u re (c) f = 1 mhz 0.1 1.0 10.0 100.0 v r - re v erse v oltage ( v ) 1 8 0 160 140 120 100 8 0 60 40 20 0 c d - diode capacitance (pf) 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
|
