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| savantic semiconductor product specification silicon pnp power transistors 2SB896 2SB896a description with t o-220c package low collector saturation voltage high speed switching applications for low voltage switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SB896 -40 v cbo collector-base voltage 2SB896a open emitter -50 v 2SB896 -20 v ceo collector-emitter voltage 2SB896a open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -10 a i cm collector current-peak -15 a p c collector power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -50~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB896 2SB896a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SB896 -20 v (br)ceo collector-emitter breakdown voltage 2SB896a i c =-10ma; i b =0 -40 v v cesat collector-emitter saturation voltage i c =-7a; i b =-0.23a -0.6 v v besat base-emitter saturation voltage i c =-7a; i b =-0.23a -1.5 v 2SB896 v cb =-40v; i e =0 i cbo collector cut-off current 2SB896a v cb =-50v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-2a ; v ce =-2v 60 260 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 200 pf f t transition frequency i c =-0.5a ; v ce =-10v 150 mhz switching times t on turn-on time 0.1 s t stg storage time 0.5 s t f fall time i c =-2a ; i b1 =-i b2 =-66ma 0.1 s h fe-2 classifications r q p 60-120 90-180 130-260 savantic semiconductor product specification 3 silicon pnp power transistors 2SB896 2SB896a package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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