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  inchange semiconductor isc product specification isc silicon pnp power transistor 2SB634 description c ollector-emitter breakdown voltage- : v (br)ceo = -100v(min) high power dissipation applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -6 v i c collector current-continuous -7 a i cm collector current-peak -10 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB634 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = -5ma; i e = 0 -120 v v (br)ceo collector-emitter breakdown voltage i c = -50ma; r be = -120 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -6 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -4v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -1a; v ce = -5v 40 320 h fe-2 dc current gain i c = -3a; v ce = -5v 20 f t current-gain?bandwidth product i c = -1a; v ce = -5v 15 mhz ? h fe-1 classifications c d e f 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn 2


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