CMKD3003DO surface mount dual, isolated, opposing low leakage silicon switching diodes description: the central semiconductor CMKD3003DO contains two (2) isolated opposing silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a ultramini? surface mount package. these devices are designed for switching applications requiring extremely low leakage. marking code: c303 sot-363 case maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 180 v average rectified current i o 200 ma continuous forward current i f 600 ma peak repetitive forward current i frm 700 ma peak forward surge current, tp=1.0s i fsm 2.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =125v 1.0 na i r v r =125v, t a =150c 3.0 a i r v r =180v 10 na i r v r =180v, t a =150c 5.0 a bv r i r =5.0a 200 v v f i f =1.0ma 0.62 0.72 v v f i f =10ma 0.72 0.83 v v f i f =50ma 0.80 0.89 v v f i f =100ma 0.83 0.93 v v f i f =200ma 0.87 1.10 v v f i f =300ma 0.90 1.15 v c t v r =0, f=1.0mhz 4.0 pf r0 (19-september 2011) www.centralsemi.com
lead code: 1) anode d1 2) nc 3) cathode d2 4) anode d2 5) nc 6) cathode d1 marking code: c303 CMKD3003DO surface mount dual, isolated, opposing low leakage silicon switching diodes sot-363 case - mechanical outline pin configuration www.centralsemi.com r0 (19-september 2011)
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