advanced power n-channel enhancement mode electronics corp. power mosfet dynamic dv/dt rating bv dss 600/675v repetitive avalanche rated r ds(on) 1.2 fast switching i d 7a simple drive requirement description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c thermal resistance junction-case max. 3.4 /w rthj-a thermal resistance junction-ambient max. 65 /w data & specifications subject to change without notice 200218033 AP07N70CF/i 140 -55 to 150 parameter 7 parameter rating 600/675 - /a 7 4.4 storage temperature range -55 to 150 18 37 linear derating factor 0.3 7 ap07n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. to-220fm & to-220cfm type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost- effectiveness. the to-220fm & to-220cfm package is universally preferred for all commercial-industrial applications. the device is suited for switch mode power supplies ,dc-ac converters and high current high speed switching circuits. 30 g d s to-220fm(f) g d s g d s to-220cfm(i) www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma / - 600 - - v v gs =0v, i d =1ma / a 675 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =3.5a - - 1.2 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =50v, i d =3.5a - 4.5 - s i dss drain-source leakage current (t j =25 o c) v ds =670v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =7a - 32 - nc q gs gate-source charge v ds =480v - 8.6 - nc q gd gate-drain ("miller") charge v gs =10v - 9 - nc t d(on) turn-on delay time 3 v dd =300v - 17 - ns t r rise time i d =7a - 15 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 35 - ns t f fall time r d =43 -18- ns c iss input capacitance v gs =0v - 2075 - pf c oss output capacitance v ds =25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 7 a i sm pulsed source current ( body diode ) 1 --18 a v sd forward on voltage 3 t j =25 , i s =7a, v gs =0v - - 1.5 v notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=5mh , r g =25 , i as =7a. 3.pulse width < 300us , duty cycle < 2%. ordering code AP07N70CF(/i)- x : x denote bv dss grade blank = bv dss 600v a = bv dss 675v AP07N70CF/i 30v 1 00 www.datasheet.co.kr datasheet pdf - http://www..net/
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature AP07N70CF/i 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =3.5a 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 10 12 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =6.0v v g =5.5v v g =5.0v v g =4.0v v g =10v 0 2 4 6 8 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =6.0v v g =5.5v v g =5.0v v g =4.0v v g =10v www.datasheet.co.kr datasheet pdf - http://www..net/
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP07N70CF/i 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0 10 20 30 40 0 50 100 150 tc , case temperature( o c) p d (w) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0.1 1 10 100 1 10 100 1000 10000 v ds (v) i d (a) t c =25 o c s in g le pulse 10us 100us 1ms 10ms 100ms www.datasheet.co.kr datasheet pdf - http://www..net/
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature AP07N70CF/i 0 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 1 100 10000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =320v v ds =400v v ds =480v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd (v) i s (a) t j = 150 o ct j = 25 o c www.datasheet.co.kr datasheet pdf - http://www..net/
AP07N70CF/i fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a www.datasheet.co.kr datasheet pdf - http://www..net/
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