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inchange semiconductor isc product specification isc silicon npn power transistor 2SD795 description c ollector-emitter breakdown voltage- : v (br)ceo = 40v(min) low colle ctor-emitter saturation voltage- : v ce(sat) = 0.7v(max) @i c = 2.0a applications designed for audio frequency power amplifier and low speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 5 v i c collector current-continuous 3.0 a i cm collector current-peak 6.0 a i b b base current-continuous 0.6 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 20 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD795 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 0.7 v v be( on ) base-emitter on voltage i c = 0.5a; v ce = 1v 0.9 v i cbo collector cutoff current v cb = 50v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 3v; i c = 0 1.0 a h fe-1 dc current gain i c = 0.5a; v ce = 1v 60 400 h fe-2 dc current gain i c = 2.5a; v ce = 1v 30 c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 40 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 95 mhz ? h fe- 1 classifications r q p e 60-120 100-200 160-320 200-400 isc website www.iscsemi.cn 2 |
Price & Availability of 2SD795 |
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