plastic darlington complementary silicon power transistors ...des igned for general purpose amplifier and highspeed switching applications. ? high dc current gain h fe = 1400 (typ) @ i c = 2.0 adc ? collectoremitter sustaining voltage e @ 10 madc v ceo(sus) = 45 vdc (min) e bd776 = 60 vdc (min) e bd777, 778 = 80 vdc (min) e bd780 ? reverse voltage protection diode ? monolithic construction with builtin baseemitter output resistor ??????????????????????? ??????????????????????? maximum ratings ??????????? ? ????????? ? ??????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? bd776 ??? ? ? ? ??? bd777 bd778 ???? ? ?? ? ???? bd780 ??? ? ? ? ??? unit ??????????? collectoremitter voltage ??? v ceo ???? 45 ??? 60 ???? 80 ??? vdc ??????????? ??????????? collectorbase voltage ??? ??? v cb ???? ???? 45 ??? ??? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? emitterbase voltage ??? ??? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak ??? ? ? ? ??? i c ????????? ? ??????? ? ????????? 4.0 6.0 ??? ? ? ? ??? adc ??????????? ??????????? base current ??? ??? i b ????????? ????????? 100 ??? ??? madc ??????????? ??????????? total device dissipation t c = 25 c derate above 25 c ??? ??? p d ????????? ????????? 15 0.12 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ????????? ? ??????? ? ????????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristics ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 8.34 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 83.3 ??? ??? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. ? semiconductor components industries, llc, 2001 january, 2001 rev. 8 1 publication order number: bd776/d bd777 bd776 bd778 bd780 darlington 4ampere complementary silicon power transistors 45, 60, 80 volts 15 watts *on semiconductor preferred device * case 7708 to225aa type npn pnp
bd777 bd776 bd778 bd780 http://onsemi.com 2 16 12 0 20 40 60 100 120 140 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 80 4.0 8.0 1.6 1.2 0 0.4 0.8 p d , power dissipation (watts) t a ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) bd776 (i o = 10 madc, i b = 0) bd777, bd778 bd780 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 45 60 80 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 20 vdc, i b = 0) bd776 (v ce = 30 vdc, i b = 0) bd777, bd778 (v ce = 40 vdc, i b = 0) bd780 ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e e e ???? ? ?? ? ???? 100 100 100 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = rated, v ceo(sus) , i e = 0) (v cb = rated, v ceo(sus) , i e = 0, i c = 100 c) ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 100 ??? ? ? ? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 1.0 ??? ??? m adc ????????????????????????????????? on characteristics ?????????????????????? ?????????????????????? dc current gain (i c = 2.0 adc, v ce = 3.0 vdc) ????? ????? h fe ??? ??? 750 ???? ???? e ??? ??? ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 1.5 adc, i b = 6 madc) ????? ????? v ce(sat) ??? ??? e ???? ???? 1.5 ??? ??? vdc ?????????????????????? ?????????????????????? base emitter saturation voltage (i c = 1.5 adc, i b = 6 madc) ????? ????? v be(sat) ??? ??? e ???? ???? 2.5 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 1.5 adc,v ce = 3 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.3 ??? ??? vdc ?????????????????????? ?????????????????????? output diode voltage drop (i ec = 2.0 adc) ????? ????? v ec ??? ??? e ???? ???? 2.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gain bandwidth product (i c = 1.0 adc, v ce = 2.0 vdc) ????? ????? f t ??? ??? 20 ???? ???? e ??? ??? mhz ?????????????????????? ?????????????????????? ????? ????? symbol ??? ??? min ???? ???? typ ??? ??? unit ?????????????????????? ?????????????????????? turnon time (i c = 250 ma/v ce = 2 v) bd775777 bd776778780 ????? ????? t on ??? ??? e e ???? ???? 250 150 ??? ??? ns ?????????????????????? ? ???????????????????? ? ?????????????????????? turnoff time (i c = 250 ma, v ce = 2 v) bd775777 bd776778780 ????? ? ??? ? ????? t off ??? ? ? ? ??? e e ???? ? ?? ? ???? 600 400 ??? ? ? ? ??? ns
bd777 bd776 bd778 bd780 http://onsemi.com 3 figure 2. active region safe operating area 10 1.0 v ce , collector-emitter voltage (volts) 5.0 2.0 0.5 0.01 2.0 5.0 10 50 100 0.05 0.02 i c , collector current (amp) bd775, 776 bd777, 778 bd780 20 curves apply below rated v ceo t j = 150 c dc 5.0 ms 1.0 ms 500 m s 100 m s 3000 figure 3. typical dc current gain i c , collector current (amp) 100 0.2 0.3 0.5 0.7 1.0 2.0 5.0 1500 700 400 200 2000 1000 h fe , dc current gain t j = 25 c v ce = 2.0 vdc 1.0 0.1 30 70 500 300 bd776, 778, 780 777 4.0 3.0 3.0 7.0 bonding wire limited thermally limited @ t c = 25 c (single pulse) secondary breakdown limited figure 4. darlington circuit schematic base pnp bd776 bd778 bd780 collector emitter 150 base npn bd777 bd779 collector emitter 150
bd777 bd776 bd778 bd780 http://onsemi.com 4 package dimensions case 7708 to225aa type issue v style 1: pin 1. emitter 2. collector 3. base notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.055 1.15 1.39 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd777/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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