symbol 10 sec steady state v ds v gs -5 -3.7 -3.7 -3.2 i dm 1.6 1.0 1.0 0.7 t j , t stg parameter symbol typ max t 10s 58 80 steady state 94 120 steady state r jl 37 50 12 c/w r ja c -55 to 150 -25 a p d w maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a drain-source voltage -30 absolute maximum ratings t a =25c unless otherwise noted junction and storage temperature range t a =70c units parameter t a =25c t a =70c vv i d gate-source voltagepulsed drain current b continuous draincurrent a power dissipation a t a =25c AO6401Ap-channel enhancement mode field effect transistor features v ds = -30v i d = -5.0a (v gs = -10v) r ds(on) < 44m; (v gs = -10v) r ds(on) < 55m; (v gs = -4.5v) r ds(on) < 82m; (v gs = -2.5v) general description the AO6401A uses advanced trench technology toprovide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. thisdevice is suitable for use as a load switch or in pwm applications. AO6401A is pb-free (meets rohs & sony 259 specifications). d tsop6 top view g d d s d 12 3 65 4 g d s alpha & omega semiconductor, ltd. www.aosmd.com
AO6401A symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 100 na v gs(th) -0.5 -1 -1.5 v i d(on) -25 a 35 44 t j =125c 49 62 44 55 m 66 82 m g fs 13 s v sd -0.73 -1 v i s -1.6 a c iss 943 1180 pf c oss 108 pf c rss 73 pf r g 3 6 12 q g 9.8 13 nc q gs 2.0 nc q gd 3.3 nc t d(on) 5.2 ns t r 6.8 ns t d(off) 42 ns t f 15 ns t rr 21 28 ns q rr 14.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. dynamic parameters maximum body-diode continuous currentgate resistance v gs = 0v, v ds = 0v, f=1mhz v gs = 0v, v ds = -15v, f=1mhz input capacitanceoutput capacitance turn-on rise time turn-off delaytime v gs = -10v, v ds = -15v, r l =3 , r gen =3 turn-off fall time turn-on delaytime switching parameters gate source chargegate drain charge total gate charge v gs = -4.5v, v ds = -15v, i d = -5a m i s = -1a,v gs = 0v v ds = -5v, i d = -5.0a v gs = -4.5v, i d = -4.0a v gs = -2.5v, i d = -3.5a r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage i dss a gate threshold voltage v ds = v gs i d = -250 a v ds = -30v, v gs = 0v v ds = 0v, v gs = 12v zero gate voltage drain currentgate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f = -5a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d = -250 a, v gs = 0v v gs = -4.5v, v ds = -5v v gs = -10v, i d = -5.0a reverse transfer capacitance i f = -5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature.c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.rev0 oct 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO6401A typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s functions and reliability without notice. 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -3.0v -4.5v v gs =-2.0v -3.5v -10v -2.5v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds = -5v -40c 30 40 50 60 70 80 90 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs = -4.5v v gs = -2.5v v gs = -10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs = -10v i d = -5a v gs = -2.5v i d = -3.5a 20 40 60 80 100 120 1 2 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d = -5.0a 25c 125c -40c v gs = -4.5v i d = -4a alpha & omega semiconductor, ltd. www.aosmd.com
AO6401A typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without notice. 0 1 2 3 4 5 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ? ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds = -15v i d = -5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =120c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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