vt2045bp www.vishay.com vishay general semiconductor revision: 23-feb-12 1 document number: 89448 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 trench mos barrier schottky rectifier for pv solar cell bypass protection ultra low v f = 0.33 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2011/65/eu ? halogen-free according to iec 61249-2-21 definition typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. mechanical data case: to-220ac molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 2 01 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) with heatsink (2) meets the requirements of iec 61215 ed.2 bypass di ode thermal test primary characteristcs i f(dc) 20 a v rrm 45 v i fsm 160 a v f at i f = 20 a 0.51 v t op max. (ac mode) 150 c t j max. (dc forw ard current) 200 c to-220ac tmbs ? case pin 2 pin 1 1 2 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt2045bp unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum dc forward bypa ssing current (fig. 1) i f(dc) (1) 20 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 160 a operating junction temperature range (ac mode) t op - 40 to + 150 c junction temperature in dc forward current without reverse bias, t ? 1 h t j (2) ?? 200 c
vt2045bp www.vishay.com vishay general semiconductor revision: 23-feb-12 2 document number: 89448 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - typical instantaneous forward characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 5 a t a = 25 c v f (1) 0.44 - v i f = 10 a 0.49 - i f = 20 a 0.57 0.66 i f = 5 a t a = 125 c 0.33 - i f = 10 a 0.41 - i f = 20 a 0.51 0.63 reverse current v r = 45 v t a = 25 c i r (2) - 2000 a t a = 125 c 10 30 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt2045bp unit typical thermal resistance r ? jc 1.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ac vt2045bp-m3/4w 1.87 4w 50/tube tube 0 4 8 12 16 20 24 0 25 50 75 100 125 150 175 200 dc forward current (a) ca s e temperature (c) dc forward current at thermal e q uilibrium 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.7 0.9 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 100 c t a = 25 c t a = 125 c 0.6 0.8
vt2045bp www.vishay.com vishay general semiconductor revision: 23-feb-12 3 document number: 89448 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical reverse characteristics fig. 4 - typical j unction capacitance fig. 5 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) 0.001 0.1 1 10 100 20 40 60 80 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 25 c t a = 100 c 0.01 100 1000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) 10 000 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p t - pul s e duration ( s ) 0.1 1 10 0.01 0.1 1 10 100 tran s ient thermal impedance (c/w) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pi n 0.415 (10.54)max. 0.370 (9.40) 0.360 (9.14) 0.057 (1.45) 0.045 (1.14) case pi n 2 pi n 1 to-220ac
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