050-7619 rev a 9-2005 apt75gn60b(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 4ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts a na ? symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt75gn60b(g) 600 30 155 93 225 225a @ 600v 536 -55 to 175 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current 8 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 175c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef?cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli?es gate drive design and minimizes losses. ? 600v field stop ? trench gate: low v ce(on) ? easy paralleling ? 6s short circuit capability ? intergrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 600 5.0 5.8 6.5 1.05 1.45 1.85 1.87 25 tbd 600 4 6 00v apt75gn60b APT75GN60BG* *g denotes rohs compliant, pb free terminal finish. ? g c e t o - 2 4 7 g c e
050-7619 rev a 9-2005 apt75gn60b(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) 8 continuous current limited by package pin temperature to 100a. apt reserves the right to change, without notice, the speci?cations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max .28 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 75a t j = 175c, r g = 4.3 ? 7 , v ge = 15v, l = 100h,v ce = 600v v cc = 600v, v ge = 15v, t j = 125c, r g = 4.3 ? 7 i nductive switching (25c) v cc = 400v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 4500 370 150 9.5 485 30 270 225 6 47 48 385 38 2500 3725 2140 47 48 430 55 2600 4525 2585 unit pf v nc a s ns j ns j
050-7619 rev a 9-2005 apt75gn60b(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized ) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 100 200 300 400 500 8 10 12 14 16 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175 250 200 150 100 50 0 16 14 12 10 8 6 4 2 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 200 180 160 140 120 100 80 60 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 13 & 15v 9v 8v 7v 10v t j = 25c. 250s pulse test <0.5 % duty cycle i c = 150a i c = 75a i c = 37.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 150a i c = 75a i c = 37.5a t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ge = 15v t j = 175c 11v 12v t j = 175c v ce = 480v v ce = 300v v ce = 120v i c = 75a t j = 25c lead temperatur e limite d lead temperatur e limite d
050-7619 rev a 9-2005 apt75gn60b(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 1.0 ? l = 100 h switching energy losses (mj) e on2 , turn on energy loss (mj) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (mj) e off , turn off energy loss (mj) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v v ge = +15v r g = 1.0 ? r g = 1.0 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or =125c r g = 1.0 ? l = 100 h 60 50 40 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 40 35 30 25 20 15 10 5 0 600 500 400 300 200 100 0 90 80 70 60 50 40 30 20 10 0 6 5 4 3 2 1 0 16 14 12 10 8 6 4 2 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 1.0 ? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 1.0 ? v ce = 400v v ge = +15v t j = 125 c 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 0 10 20 30 40 50 0 25 50 75 100 125 r g = 1.0 ? , l = 100 h, v ce = 400v e on2, 150a e off, 150a e on2, 75a e off, 75a e on2, 37.5a e off, 37.5a e on2, 150a e off, 150a e on2, 75a e off, 75a e on2, 37.5a e off, 37.5a
050-7619 rev a 9-2005 apt75gn60b(g) typical performance curves 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 7,000 1,000 500 100 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 10 30 50 70 90 110 130 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 1.0 ? 100 50 10 5 1 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c oes c res c ies 0.0998 0.18 1 0.00438 0.153 powe r (watts ) rc mode l junctio n temp. ( c) case temperature. ( c)
050-7619 rev a 9-2005 apt75gn60b(g) figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apt75dq60 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collect o r emitte r gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outlin e e1 sac: tin, silver, copper
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