sot-23(package) vds= -20v rds(on), vgs@-4.5v, ids@-1.6a= ? features advanced trench process technology high density cell design for ultra low on-resistance package dimensions s g d maximum ratings and thermal characterist ics (ta = 25oc unless otherwise noted) 115m ? 155m parameter symbol limit unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current i d -1.6 pulsed drain current 1) i dm -5 a maximum power dissipation p d w operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-ambient thermal resistance (pcb mounted) 3) 166 o c/w 0.5 2) junction-to-ambient thermal resistance (pcb mounted) 2) 100 r r thja notes pulse width limited by maximum junction temperature. surface mounted on fr4 board, t 5 sec. surface mounted on fr4 board. 1) 3) 2) rds(on), vgs@-2.5v, ids@-1.3a= millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 1.90 ref. b 2.40 2.80 h 1.00 1.30 c 1.40 1.60 k 0.10 0.20 d 0.35 0.50 j 0.40 - e 0 0.10 l 0.85 1.15 f 0.45 0.55 m 0 10 millimeter 20v p-channel enhancement mode mosfet FDN338P 1 date:2011/05 www.htsemi.com semiconductor jinyu
electrical characteristics parameter test condition static drain-source breakdown voltage bv dss v gs = 0v, i d = -250ua -20 v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -1.6a v gs = -2.5v, i d = -1.3a 116 160 m ? gate threshold voltage v gs(th) v ds =v gs , i d = -250ua -0.42 v zero gate voltage drain current v ds = -16v, v gs = 0v -1 gate body leakage i gss v gs = 8v, v ds = 0v 100 na forward transconductance g fs v ds = -5v, i d = -2.8a 6.5 s dynamic total gate charge q g 5.8 10 gate-source charge q gs 0.85 gate-drain charge q gd v ds = -6v, i d -2.8a v gs = -4.5v 1.7 nc turn-on delay time t d(on) 13 25 turn-on rise time t r 36 60 turn-off delay time t d(off) 42 70 turn-off fall time t f v dd = -6v, rl=6 ? i d -1.a, v gen = -4.5v r g = 6 34 60 ns input capacitance c iss 415 output capacitance c oss 223 reverse transfer capacitance c rss v ds = -6v, v gs = 0v f = 1.0 mhz 87 pf source-drain diode max. diode forward current i s diode forward voltage v sd i s = -1.6a, v gs = 0v -1.2 v pulse test: pulse width <= 300us, duty cycle<= 2% i dss ua ? -0.8 1) 1) 1) symbol min. max. typ. unit - 1 . 6 a 88 115 -1.5 20v p-channel enhancement mode mosfet 2 date:2011/05 www.htsemi.com semiconductor jinyu FDN338P
on-resistance vs. drain current output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 0 2 4 6 8 10 012345 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = - 55 c 125 c 0, 0.5, 1 v 2.5 v v gs = 5, 4.5, 4, 3.5, 3 v 1.5 v 2 v 0 200 400 600 800 1000 036912 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 0 50 100 150 0 1 2 3 4 5 02468 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 gate charge - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c rss c oss c iss v ds = 6 v i d = 2.8 a - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 2.8 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c 20v p-channel enhancement mode mosfet 3 date:2011/05 www.htsemi.com semiconductor jinyu FDN338P
0.01 0.10 1.00 10.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 power (w) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 0 50 100 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 30 - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) time (sec) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 2.8 a i d = 250 a 10 1 10 t c = 25 c single pulse 14 12 8 4 0 t j = 25 c t j = 150 c 2 6 10 20v p-channel enhancement mode mosfet 4 date:2011/05 www.htsemi.com semiconductor jinyu FDN338P
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