inchange semiconductor isc product specification isc silicon pnp power transistor BD788 description dc current gain- : h fe = 40~250(min)@ i c = -0.2a collector-emitter sustaining voltage - : v ceo(sus) = -60v(min) complement to type bd787 applications designed for low power audio amplifier and low current, high-speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -6 v i c collector current-continuous -4 a i cm collector current-peak -8 a i b b base current-continuous -1 a p c collector power dissipation @ t c =25 15 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.34 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD788 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -10ma; i b = 0 -60 v v ce( sat )-1 collector-emitter saturation voltage i c = -0.5a; i b = -50ma b -0.4 v v ce( sat )-2 collector-emitter saturation voltage i c = -1a; i b = -0.1a b -0.6 v v ce( sat )-3 collector-emitter saturation voltage i c = -2a; i b = -0.2a b -0.8 v v ce( sat )-4 collector-emitter saturation voltage i c = -4a; i b = -0.8a b -2.5 v v be( sat ) base-emitter saturation voltage i c = -2a; i b = 0.2a b -2.0 v v be( on ) base-emitter on voltage i c = -2a; v ce = -3v -1.8 v i cex collector cutoff current v cb = -80v;v be(off) = -1.5v v cb = -40v;v be(off) = -1.5v;t c =125 -1.0 -0.1 a ma i ceo collector cutoff current v ce = -30v; i b = 0 b -0.1 ma i ebo emitter cutoff current v eb = -6v; i c = 0 -1.0 a h fe-1 dc current gain i c = -0.2a; v ce = -3v 40 250 h fe-2 dc current gain i c = -1a; v ce = -3v 25 h fe-3 dc current gain i c = -2a; v ce = -3v 20 h fe-4 dc current gain i c = -4a; v ce = -3v 5 f t current-gain?bandwidth product i c = -0.1a; v ce = -10v 50 mhz c ob collector output capacitance i e = 0; v cb = -10v; f= 0.1mhz 70 pf isc website www.iscsemi.cn 2
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