ZT89 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 4126 issue 1 medium power silicon npn planar transistor general purpose bipolar npn transistor in a hermetically sealed to18 (to-206aa) metal package. v ceo = 65v i c = 500ma p tot = 300mw 65v 65v 5v 500ma 300mw 2mw/c 500c/w ?65 to 175c mechanical data dimensions in mm (inches) to18 package (to-206aa) absolute maximum ratings (t case = 25c unless otherwise stated) pin 1 = emitter underside view pin 2 = base pin 3 = collector v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current p tot dissipation @ t amb = 25c derating linearly r jc thermal resistance t stg, t j storage and operatuing junction temperature 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min.
ZT89 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 4126 issue 1 65 0.2 1.2 0.5 0.1 35 50 200 35 25 50 20 parameter test conditions min. typ. max. unit electrical characteristics (t case = 25 c unless otherwise stated) i c = 10ma i b = 0 i c = 50ma i b = 5ma i c = 75ma i b = 3ma v cb = 65v i e = 0 v eb = 5v i c = 0 v ce = 0.4v i c = 1ma v ce = 0.4v i c = 10ma v ce = 0.4v i c = 30ma v ce = 0.75v i c = 75ma v ce = 6v i c = 10ma v ce = 6v i e = 0 f = 1mhz v ceo(sus) collector ? emitter sustaining voltage v ce(sat) collector ? emitter saturation voltage v be(sat) base ? emitter saturation voltage i cbo collector cut-off current i ebo emitter - base reverse current h fe dc current gain f t transition frequency c ob output capacitance v a a mhz pf
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