sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com pk ( pd,pe,kk ) 55hb thyristor module 93.5max 26max30max 1321 k1 g1 80 110tab 16.5 23 3 ~+ 21 23 3-m5 2- 6.5 k2 g2 unit a ? mark thyristor and diode part. no mark thyristor part symbol item conditions ratings 55 unit i t av ? average on-state current i t rms ? r.m.s. on-state current single phase, half wave, 180 ? conduction, tc 85 ? single phase, half wave, 180 ? conduction, tc 85 ? i tsm ? surge on-state current i 2 t ? i 2 t p gm peak gate power dissipation p g av average gate power dissipation i fgm peak gate current v fgm peak gate voltage (forward) 1 ? 2 cycle, 50hz / 60hz, peak value, non-repetitive value for one cycle of surge current a 86 a 1000 / 1100 a 5000 10 a 2 s w 3 v rgm peak gate voltage (reverse) di ? dt critical rate of rise of on-state current i g 1 100ma | tj 1 25 ?| v d 1 1 ? 2 v drm | di g /dt 1 0.1a/ s v iso ? isolation breakdown voltage (r.m.s.) tj ? operating junction temperature tstg ? storage temperature mounting torque mass mounting m6 terminal m5 a.c.1minute recommended value 2.5-3.9 25-40 recommended value 1.5-2.5 15-25 3 w a 10 v 5 v 150 a / s 2500 v 40 u p 125 ? 40 u p 125 4.7 48 2.7 28 170 ? n k< f k b g symbol item conditions ratings 10 unit i drm repetitive peak off-state current, max. i rrm ? repetitive peak reverse current, max. at v drm , single phase, half wave, tj 1 125 ? at v drm , single phase, half wave, tj 1 125 ? v tm ? peak on-state voltage, max. i gt ? v gt gate trigger current/voltage, max. v gd non-trigger gate, voltage. min. tgt turn on time, max. dv ? dt critical rate of rise of off-state voltage, min. i h holding current, typ. on-state current 165a, tj 1 125 ? inst. measurement tj 1 25 ?| i t 1 1a | v d 1 6v ma 10 ma 1.50 v 100 / 2 tj 1 125 ?| v d 1 1 ? 2 v drm i t 1 55a | i g 1 100ma | tj 1 25 ?| v d 1 1 ? 2 v drm | di g / dt 1 0.1a / s 0.25 ma / v v 10 tj 1 125 ? , v d 1 2 ? 3 v drm , exponential wave. tj 1 25 ? i l lutching current, typ. rth j-c ? thermal impedance, max. tj 1 25 ? junction to case 500 s v / s 50 ma 100 ma 0.50 ? / w electrical characteristics maximum ratings symbol item pk55hb120 pd55hb120 kk55hb120 pe55hb120 ratings pk55hb160 PD55HB160 kk55hb160 pe55hb160 unit v rrm ? repetitive peak reverse voltage 1200 1600 v 1350 1700 v 1200 1600 v v rsm v drm ? non-repetitive peak reverse voltage repetitive peak off-state voltage power thyristor/diode module pk55hb series are designed for various rectifier circuits and power controls. for your circuit application. following internal connections and wide voltage ratings up to 1,600v are available. and electrically isolated mounting base make your mechanical design easy. ? i t(av) 55a, i t(rms) 86a, i tsm 1100a ? di/dt 150 a/ s ? dv/dt 500v/ s applications various rectifiers ac/dc motor drives heater controls light dimmers static switches internal configurations ul;e76102 m , " , " , ( , ( pk , " , " , , ( pe , " , " , ( , pd , " " ( , ( kk
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