absolute maximum ratings symbol parameter value units v dss drain to source voltage 200 v i d continuous drain current(@t c = 25 c) 18 a continuous drain current(@t c = 100 c) 11 a i dm drain current pulsed (note 1) 72 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 220 mj e ar repetitive avalanche energy (note 1) 13.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d total power dissipation(@t c = 25 c) 135 w derating factor above 25 c 1.11 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 0.9 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w DFP640 1/7 copyright@ d&i semiconductor co., ltd., korea . all rights reserved. features r ds(on) (max 0.18 ? )@v gs =10v gate charge (typical 44nc) improved dv/dt capability high ruggedness 100% avalanche tested general description this n-channel enhancement mode field-effect power transistor using di semiconductor?s advanc ed planar stripe, dmos technol- ogy intended for off-line switch mode power supply. also, especially designed to mi nimize rds(on) , low gate charge and high rugged avalanche characteristics. the to-220 pkg is well suited for dc-dc converter and s- correction in color-monitor system. n-channel mosfet to-220 1 2 3 r ds(on) = 0.18 ohm i d = 18a bv dss = 200v march, 2005. rev. 0. 1.gate 2.drain 3.source
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 200 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c -0.26-v/c i dss drain-source leakage current v ds = 200v, v gs = 0v --1ua v ds = 160v, t c = 125 c --10ua i gss gate-source leakage, forward v gs = 25v, v ds = 0v --100na gate-source leakage, reverse v gs = -25v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 9a -0.150.18 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 1010 1300 pf c oss output capacitance - 190 240 c rss reverse transfer capacitance - 80 110 dynamic characteristics t d(on) turn-on delay time v dd =100v, i d =18a, r g =25 ? ? see fig. 13. (note 4, 5) - 15 30 ns t r rise time - 80 150 t d(off) turn-off delay time - 50 90 t f fall time - 60 120 q g total gate charge v ds =160v, v gs =10v, i d =18a ? see fig. 12. (note 4, 5) - 44 55 nc q gs gate-source charge - 10 - q gd gate-drain charg e(miller charge) - 18 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --18 a i sm pulsed source current - - 72 v sd diode forward voltage i s =18a, v gs =0v - - 1.5 v t rr reverse recovery time i s =18a, v gs =0v, di f /dt=100a/us -190- ns q rr reverse recovery charge - 1.3 - uc DFP640 ? notes 1. repeativity rating : pulse width limited by junction temperature 2. l =1mh, i as =18a, v dd = 50v, r g = 50 ? , starting t j = 25c 3. i sd ? 18 a, di/dt ? 300a/us, v dd ? bv dss , starting t j = 25c 4. pulse test : pulse width ? 300us, duty cycle ? 2% 5. essentially independent of operating temperature. 2/7
0 1020304050 0 2 4 6 8 10 12 v ds = 50v v gs , gate-source voltage [v] v ds = 125v v ds = 200v note : i ? d = 9a q g , total gate charge [nc] 0 5 10 15 20 25 30 35 40 0 500 1000 1500 2000 2500 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes : ? 1. v gs = 0v 2. f=1mhz c iss c oss c rss capacitance [pf] v ds , drain-source voltage [v] 0.20.40.60.81.01.21.41.61.82.0 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 20406080 0.0 0.1 0.2 0.3 0.4 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) , drain-source on-resistance [ ? ] i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 30v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 notes : ? 1. 250 s pulse test 2. t c = 25 ? v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v i d , drain current [a] v ds , drain-source voltage [v] fig 4. on state current vs. allowable case temperature fig 5. capacitance characteristics fig 6. gate charge characteristics DFP640 fig 1. on-state characteristics fig 2. transfer characteristics fig 3. on resistance variation vs. drain current and gate voltage 3/7
-100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 9 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 0.90 /w max. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 5 10 15 20 t c' case temperature [ o c] i d' drain current [a] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] fig 9. maximum safe operating area fig 10. maximum drain current vs. case temperature fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature DFP640 4/7 fig 11. transient thermal response curve
DFP640 5/7 fig 13. switching time test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms fig. 12. gate charge test circuit & waveforms 12v 200nf 50ko 300nf v gs 1ma same type as dut dut v ds v gs charge q g q gs q gd pulse generator 10v r g v ds r l v dd (0.5 rated v ds ) dut v ds v in 90% 10% t d(on) t r t d(off) t f t on t off time 10v v ds r g v ds (t) dut bv dss l i d v dd i d (t) i as e as =l l i as 2 bv dss bv dss - v dd 1 2 t p
DFP640 dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v d d l l i s i s fig. 15. peak diode recovery dv/dt test circuit & waveforms 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 6/7
DFP640 7/7 to-220 package dimension m l o n k j i h k j i h a c g f d e b a c g f d e b ? 4.70 3.30 15.92 1.40 2.90 13.28 9.40 6.52 max 4.50 3.00 15.52 1.30 2.80 13.08 9.20 6.32 typ. 4.30 2.70 15.12 1.20 2.70 12.88 9.00 6.12 min mm h g f e d c b a dimension 4.70 3.30 15.92 1.40 2.90 13.28 9.40 6.52 max 4.50 3.00 15.52 1.30 2.80 13.08 9.20 6.32 typ. 4.30 2.70 15.12 1.20 2.70 12.88 9.00 6.12 min mm h g f e d c b a dimension 5.28 2.64 1.62 2.50 0.60 1.40 max 3.60 5.08 2.54 1.52 9.90 2.40 0.50 1.30 typ. 4.88 2.44 1.42 2.30 0.45 1.25 min mm ? o n m l k j i dimension 5.28 2.64 1.62 2.50 0.60 1.40 max 3.60 5.08 2.54 1.52 9.90 2.40 0.50 1.30 typ. 4.88 2.44 1.42 2.30 0.45 1.25 min mm ? o n m l k j i dimension
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