2009. 6. 10 1/4 semiconductor technical data KMA3D7P20SA p-ch trench mosfet revision no : 1 general description its mainly suitable for use as a load switch. features v dss =-20v, i d =-3.7a drain to source on-state resistance r ds(on) =76m (max.) @ v gs =-4.5v r ds(on) =112m (max.) @ v gs =-2.5v maximum rating (ta=25 ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g1.9 0 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ pin connection (top view) characteristic symbol p-ch unit drain to source voltage v dss -20 v gate to source voltage v gss 12 v drain current dc@ta=25 ? (note1) i d -3.7 a pulsed (note1) i dp -16 drain to source diode forward current i s -16 a drain power dissipation ta=25 ? (note1) p d 1.25 w ta=100 ? (note1) 0.6 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient (note1) r thja 100 /w 2 3 1 gs d 1 2 3 knh note1) surface mounted on 1 1 fr4 board, t 5sec.
2009. 6. 10 2/4 KMA3D7P20SA revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =-250 a -20 - - v drain cut-off current i dss v gs =0v, v ds =-20v - - -1 a gate to source leakage current i gss v gs = 12v, v ds =0v - - 100 na gate to source threshold voltage v th v ds =v gs, i d =-250 a -0.55 - -1.5 v drain to source on resistance r ds(on) v gs =-4.5v, i d =-2.8a (note2) - 65 76 m v gs =-2.5v, i d =-2.3a (note2) - 90 112 dynamic input capacitance c iss v ds =-10v, f=1mhz v gs =0v - 443 - pf output capacitance c oss - 92 - reverse transfer capacitance c rss - 51 - total gate charge q g v ds =-10v, i d =-2.8a v gs =-4.5v (note2) - 4.37 - nc gate to source charge q gs - 0.54 - gate to drain charge q gd - 1.54 - turn-on delay time t d(on) v dd =-10v, v gs =-4.5v , i d =-2.8a, r g =6 (note2) - 6.2 - ns turn-on rise time t r - 18 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 33 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =-1.0a (note2) - -0.8 -1.2 v note2) pulse test : pulse width <300 , duty cycle < 2%
2009. 6. 10 3/4 KMA3D7P20SA revision no : 1 gate to source voltage v gs (v) 0 - 1 - 3 - 2 - 4 fig3. i d - v gs fig5. v th - t j -75 - 50 - 25 -0.6 -0.8 -0.2 -0.4 -1.0 -1.2 -1.4 -1.6 050 25 100 175 75 150 125 drain current i d (a) tj=150 c tj = -55 c tj=25 c threshold voltage v th (v) junction temperature t j ( ) c fig1. i d - v ds drain to source voltage v ds (v) 0 0 - 20 - 12 - 16 - 8 - 4 0 -20 - 12 - 16 - 8 - 4 - 1.0 - 3.0 - 2.0 -0.5 -2.5 - 1.5 drain current i d (a) v gs = - 1.4 v - 2.0v -3.0v - 2.5v -1.8 v -1.6v -3.5v fig2. r ds(on) - i d fig4. r ds(on) - t j fig6. i s - v sd -0.2 -0.1 -1 -10 -0.01 -100 -0.4 -1 -1.2 -0.6 -0.8 0 0 80 40 200 160 120 0 -15 -10 -20 -5 25 -25 50 -75 -50 100 150 175 125 75 v gs = - 2.5v v gs = - 4.5v 1.8 0.3 0.6 0.9 1.2 1.5 drain current i d (a) reverse drain current i s (a) junction temperture t j ( ) source to drain forward voltage v sd (v) c v gs = v ds i d = - 250 a v gs = -4.5v v gs = -2.5v -4.5v tj=25 c tj=150 c normalized on-resistance r ds(on) (m ? ) drain to source on resistance r ds(on) (m ? ) tj=-55 c
2009. 6. 10 4/4 KMA3D7P20SA revision no : 1 gate charge q g (nc) fig8. c - v ds drain to source voltage v ds (v) 0 - 5 - 3 - 1 - 2 - 4 4 3 12 05 fig9. q g - v gs capacitance c (pf) gate to source voltage v gs (v) 0 300 750 600 450 150 c oss c iss c rss f = 1mhz 10 0 5 20 15 v ds = - 10 v i d = - 2.8a fig10. transient thermal response curve drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area -10 -2 -10 -2 -10 -1 -10 0 -10 1 -10 2 -10 -1 -10 0 -10 2 -10 1 1ms 200 s 10ms 100ms dc v gs = -4.5v single pulse t a = 25 c r ds(on) limited square wave pulse duration tw (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 normalized effective transient thermal resistance 0.02 0.01 0.1 0.2 0.05 single pulse t 1 t 2 p dm 1. duty cycle d = t 1 /t 2 2. r thja =110 c/w duty cycle = 0.5 fig7. r ds(on) - v gs 0 80 40 200 160 120 0 -4 -3 -5 -2 -1 i d = - 2.8v gate to source voltage v gs (v) drain source on resistance r ds(on) (m ? ) tj=25 c tj=150 c
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