050-7453 rev a 6-2005 APT65GP60JDQ2 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1000 a) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 65a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 65a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT65GP60JDQ2 600 30 130 60 250 250a @ 600v 431 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 600 3 4.5 6 2.2 2.7 2.1 1250 5500 100 the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 400v, 33a ? low gate charge ? 50 khz operation @ 400v, 47a ? ultrafast tail current shutoff ? ssoa rated power mos 7 ? igbt ? c e g 6 00v apt 65gp60jdq2 s o t - 2 2 7 is ot op ? file # e145592 "ul recognized" g e e c
050-7453 rev a 6-2005 APT65GP60JDQ2 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein. thermal and mechanical characteristics unit c/w gm volts min typ max .29 1.21 29.2 2500 characteristic junction to case (igbt) junction to case (diode) package weight rms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) symbol r jc r jc w t v isolation dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 65a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v i nductive switching (25c) v cc = 400v v ge = 15v i c = 65a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 65a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 7400 580 35 7.5 210 50 65 250 30 55 90 65 605 1410 895 30 55 130 90 605 1925 1470 unit pf v nc a ns j ns j
050-7453 rev a 6-2005 APT65GP60JDQ2 typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ce = 480v v ce = 300v v ce = 120v i c = 65a t j = 25c i c = 130a i c = 65a i c = 32.5a v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 i c = 130a i c = 65a i c = 32.5a 100 90 80 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 3.0 2.5 2.0 1.5 1.0 0.5 0 180 160 140 120 100 80 60 40 20 0 100 90 80 70 60 50 40 30 20 10 0 250 200 150 100 50 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.10 1.05 1.00 0.95 0.90
050-7453 rev a 6-2005 APT65GP60JDQ2 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v t j = 25c , t j =125c r g = 5 ? l = 100 h 160 140 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 5000 4000 3000 2000 1000 0 6000 5000 4000 3000 2000 1000 0 v ge = 15v v ce = 400v v ge = +15v r g = 5 ? 5 25 45 65 85 105 125 145 5 25 45 65 85 105 125 145 5 25 45 65 85 105 125 145 5 25 45 65 85 105 125 145 10 25 45 65 85 105 125 145 5 25 45 65 85 105 145 165 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v t j = 25 or 125c ,v ge = 15v 35 30 25 20 15 10 5 0 140 120 100 80 60 40 20 0 6000 5000 4000 3000 2000 1000 0 10000 8000 6000 4000 2000 0 t j = 125c , v ge = 15v t j = 25c , v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c ,v ge = 15v t j = 25c ,v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c , v ge = 15v t j = 25c , v ge = 15v e on2, 130a e off, 130a e on2, 65a e off, 65a e on2, 32.5a e off , 32.5a v ce = 400v v ge = +15v t j = 125 c e on2, 130a e off, 130a e on2, 65a e off, 65a e on2, 32.5a e off , 32.5a
050-7453 rev a 6-2005 APT65GP60JDQ2 typical performance curves 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 5000 1,000 500 100 50 10 300 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 15 30 45 60 75 90 105 120 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 190 100 50 10 5 1 c ies 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c res c 0es 0.0697 0.136 0.0833 0.0175 0.227 1.08 powe r (watts ) junctio n temp. ( c) rc mode l case temperature. ( c)
050-7453 rev a 6-2005 APT65GP60JDQ2 i c a d.u.t. v ce figure 21, inductive switching test circui t v cc *driver same type as d.u.t. i c v clam p 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circui t figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions apt30dq60 65gp60b2 @ 125c eoff collector voltage collector current t gate voltage t f 10% 90% t d(off) 90% 0 t j = 125 c switching energy collector current gate voltage collector voltage t r 10% 90% 5% t d(on) t j = 125 c 5 % switching energy 10%
050-7453 rev a 6-2005 APT65GP60JDQ2 typical performance curves characteristic / test conditions maximum average forward current (t c = 99c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 65a forward voltage i f = 130a i f = 65a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.3 2.9 1.4 APT65GP60JDQ2 30 42 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 21 - 105 - 115 - 3 - - 125 - 465 - 7 - - 60 - 830 - 23 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 25b, transient thermal impedance model z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.320 c/w 0.515 c/w 0.375 c/w 0.00278 j/ c 0.0421 j/ c 0.242 j/ c power (watts ) junction temp ( c) rc model case temperatur e ( c)
050-7453 rev a 6-2005 APT65GP60JDQ2 t j = 125 c v r = 400v 15a 30a 60a 200 150 100 50 0 35 30 25 20 15 10 5 0 duty cycle = 0.5 t j = 175 c 50 45 40 35 30 25 20 15 10 5 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 150 100 50 0 c j , junction capacitance k f , dynamic paramete rs (pf) (normalized to 1000a/ s) i f(av) (a) 140 120 100 80 60 40 20 0 1400 1200 1000 800 600 400 200 0 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j = 125 c v r = 400v 60a 15a 30a t j = 125 c v r = 400v 60a 30a 15a t rr q rr q rr t rr i rrm 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage
050-7453 rev a 6-2005 APT65GP60JDQ2 typical performance curves 4 3 1 2 5 5 zer o 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - reverse r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 33. diode test circui t figure 34, diode reverse recovery waveform and definitions 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30 h d.u.t. +18v 0v v r t rr / q rr waveform 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches ) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals ar e shorted internally. current handling capability is equal for either emitter/anode terminal . apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline apt6017lll
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