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| savantic semiconductor product specification silicon npn power transistors BUV47 BUV47b d escription with to-3pn package. high voltage. very high switching speed. applications suited for 220v switchmode power supply, dc and ac motor control. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 9 a i cm collector current-peak 15 a i b base current 3 a p c collector power dissipation t c =25 90 w t j junction temperature -65~150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1.38 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV47 BUV47b c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 400 v BUV47 i c =5a; i b =1a v cesat-1 collector-emitter saturation voltage BUV47b i c =6a; i b =1.2a 1.5 v BUV47 i c =8a; i b =2.5a v cesat-2 collector-emitter saturation voltage BUV47b i c =9a; i b =3a 3.0 v BUV47 i c =5a; i b =1a v besat base-emitter saturation voltage BUV47b i c =6a; i b =1.2a 1.6 v i cex collector cut-off current v ce =850v ;v be =-2.5v 0.15 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =10a ; v ce =5v 7 10 14 switching times : t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c =5a i b1 =- i b2 =1.0a v cc =150v 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUV47 BUV47b package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
Price & Availability of BUV47
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