1/9 june 2003 n high speed: t pd = 3.8ns (typ.) at v cc =5v n low power dissipation: i cc =1 m a(max.) at t a =25c n high noise immunity: v nih =v nil = 28% v cc (min.) n power down protection on inputs and outputs n symmetrical output impedance: |i oh |=i ol =8ma(min)atv cc =4.5v n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 2v to 5.5v n improved latch-up immunity description the 74V2G241 is an advanced high-speed cmos dual bus buffer non inverter fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos technology. power down protection is provided on all inputs and outputs and 0 to 7v can be accepted on inputs with no regard to the supply voltage. this device can be used to interface 5v to 3v systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment. all inputs and outputs are equipped with protection circuits against static discharge, giving them esd immunity and transient excess voltage. 74V2G241 dual bus buffer non inverted (3-state) pin connection and iec logic symbols order codes package t & r sot23-8l 74V2G241str sot23-8l
74V2G241 2/9 input equivalent circuit pin description truth table x: "h" or "l" z: high impedance absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. 1) v cc =0v or ng =v cc (output in high impedance state) 2) high or low state recommended operating conditions 1) v cc =0v or output in high impedance state 2) high or low state 3) v in from 30% to 70% of v cc pin no symbol name and function 1, 7 1g , 2g output enable inputs 2, 5 1a, 2a data inputs 3, 6 2y, 1y data outputs 4 gnd ground (0v) 8 v cc positive supply voltage 1g 2g a y lhl l lhh h hlx z symbol parameter value unit v cc supply voltage -0.5 to +7.0 v v i dc input voltage -0.5 to +7.0 v v o dc output voltage (see note 1) -0.5 to +7.0 v v o dc output voltage (see note 2) -0.5 to v cc + 0.5 v i ik dc input diode current - 20 ma i ok dc output diode current - 20 ma i o dc output current 25 ma i cc or i gnd dc v cc or ground current 50 ma t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 260 c symbol parameter value unit v cc supply voltage 2 to 5.5 v v i input voltage 0 to 5.5 v v o output voltage (see note 1) 0 to 5.5 v v o output voltage (see note 2) 0 to v cc v t op operating temperature -55 to 125 c dt/dv input rise and fall time (note 3) (v cc =3.3 0.3v) (v cc = 5.0 0.5v) 0 to 100 0to20 ns/v ns/v
74V2G241 3/9 dc specifications symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v ih high level input voltage 2.0 1.5 1.5 1.5 v 3.0 to 5.5 0.7v cc 0.7v cc 0.7v cc v il low level input voltage 2.0 0.5 0.5 0.5 v 3.0 to 5.5 0.3v cc 0.3v cc 0.3v cc v oh high level output voltage 2.0 i o =-50 m a 1.9 2.0 1.9 1.9 v 3.0 i o =-50 m a 2.9 3.0 2.9 2.9 4.5 i o =-50 m a 4.4 4.5 4.4 4.4 3.0 i o =-4 ma 2.58 2.48 2.48 4.5 i o =-8 ma 3.94 3.8 3.8 v ol low level output voltage 2.0 i o =50 m a 0.0 0.1 0.1 0.1 v 3.0 i o =50 m a 0.0 0.1 0.1 0.1 4.5 i o =50 m a 0.0 0.1 0.1 0.1 3.0 i o =4 ma 0.36 0.44 0.44 4.5 i o =8 ma 0.36 0.44 0.44 i oz high impedance output leakage current 5.5 v i =v ih or v il v o = 5.5 or gnd 0.25 2.5 2.5 m a i i input leakage current 0to 5.5 v i = 5.5v or gnd 0.1 1 1 m a i opd power down output leakage current 0 v o = 5.5 0.5 5 10 m a i cc quiescent supply current 5.5 v i =v cc or gnd 22020 m a
74V2G241 4/9 ac electrical characteristics (input t r =t f =3ns) (*) voltage range is 3.3v 0.3v (**) voltage range is 5.0v 0.5v capacitive characteristics 1) c pd is defined as the value of the ics internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average current can be obtained by the following equation. i cc(opr) =c pd xv cc xf in +i cc /2 symbol parameter test condition value unit v cc (v) c l (pf) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. t plh t phl propagation delay time 3.3 (*) 15 5.1 7.5 1.0 8.5 1.0 9.05 ns 3.3 (*) 50 5.6 8.0 1.0 9.5 1.0 10.5 5.0 (**) 15 3.8 5.5 1.0 6.5 1.0 7.5 5.0 (**) 50 4.3 6.5 1.0 7.5 1.0 8.5 t plz t phz output disable time 3.3 (*) 15 r l =1k w 5.4 8.0 1.0 9.0 1.0 10.0 ns 3.3 (*) 50 r l =1k w 7.9 11.5 1.0 12.5 1.0 13.5 5.0 (**) 15 r l =1k w 3.6 5.0 1.0 6.0 1.0 7.0 5.0 (**) 50 r l =1k w 5.1 7.0 1.0 8.0 1.0 9.0 t pzl t pzh output enable time 3.3 (*) 15 r l =1k w 5.4 7.6 1.0 9.5 1.0 10.5 ns 3.3 (*) 50 r l =1k w 5.9 8.5 1.0 10.0 1.0 11.0 5.0 (**) 15 r l =1k w 3.7 5.9 1.0 7.0 1.0 8.0 5.0 (**) 50 r l =1k w 4.1 6.5 1.0 7.5 1.0 8.5 symbol parameter test condition value unit t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. c in input capacitance 410 10 10pf c out output capacitance 6pf c pd power dissipation capacitance (note 1) 14 pf
74V2G241 5/9 test circuit test circuit c l =15/50pf or equivalent (includes jig and probe capacitance) r1 = 1k w or equivalent r t =z out of pulse generator (typically 50 w ) waveform 1 : propagation delays (f=1mhz; 50% duty cycle) test switch t plh ,t phl open t pzl ,t plz v cc t pzh ,t phz gnd
74V2G241 6/9 waveform 2: output enable and disable time (f=1mhz; 50% duty cycle)
74V2G241 7/9 dim. mm. mils min. typ max. min. typ. max. a 0.90 1.45 35.4 57.1 a1 0.00 0.15 0.0 5.9 a2 0.90 1.30 35.4 51.2 b 0.22 0.38 8.6 14.9 c 0.09 0.20 3.5 7.8 d 2.80 3.00 110.2 118.1 e 2.60 3.00 102.3 118.1 e1 1.50 1.75 59.0 68.8 e0.65 25.6 e1 1.95 76.7 l 0.35 0.55 13.7 21.6 sot23-8l mechanical data
74V2G241 8/9 dim. mm. inch min. typ max. min. typ. max. a 180 7.086 c 12.8 13.0 13.2 0.504 0.512 0.519 d 20.2 0.795 n 60 2.362 t 14.4 0.567 ao 3.13 3.23 3.33 0.123 0.127 0.131 bo 3.07 3.17 3.27 0.120 0.124 0.128 ko 1.27 1.37 1.47 0.050 0.054 0.0.58 po 3.9 4.0 4.1 0.153 0.157 0.161 p 3.9 4.0 4.1 0.153 0.157 0.161 tape & reel sot23-xl mechanical data
74V2G241 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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