utc 2SB798 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r208-020,a power transistor description the utc 2SB798 is designed for audio frequency power amplifier applications, especially in hybrid integrated circuits. features *low collector saturation voltage: v ce(sat) < -0.4v (ic= -1.0a,i b =-100ma ) *excellent dc current gain linearity : hfe=100 typ.(v ce = -1.0v,ic=-1.0a) sot-89 1 1:emitter 2:collector 3:base absolute maximum ratings ( ta=25 c ) parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5.0 v dc -1.0 a collector current pulse(note 1) ic -1.5 a collector dissipation (note 2) p c 2 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note 1: pw Q 10ms,duty cycle Q50% note 2: when mounted on a ceramic substrate of 16cm 2 0.7 mm. electrical characteristics (ta=25 c,unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb = -30v , i e = 0 -100 na emitter cut-off current i ebo v eb = -5.0v, ic= 0 -100 na dc current gain hfe 1 v ce = -1.0v,ic= -100ma 90 200 400 dc current gain hfe 2 v ce = -1.0v,ic= -1.0a 50 100 base to emitter voltage v be v ce = -6.0v,ic= -10ma -600 -640 -700 mv collector-emitter saturation voltage v ce (sat) ic= -1.0a,i b = -0.10a -0.25 -0.40 v base-emitter saturation voltage v be (sat) ic= -1.0a,i b = -0.10a -1.0 -1.2 v gain bandwidth product f t v ce = -6.0v, i e = 10 ma 110 mhz output capacitance cob v cb = -6.0v, i e = 0, f=1mhz 36 pf note 3: pw Q 350 s,duty cycle Q2% classification of hfe1 marking dm dl dk hfe1 90-180 135-270 200-400
utc 2SB798 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r208-020,a electrical characteristics curves 0 100 1.0 ta-ambient temperature - collector dissipation vs. ambient temperature p t -total power dissipation -w 150 0.5 50 200 250 0 1.5 2.0 2.5 w hen mounted on a ceramic substrate of 16cm 2 *0.7mm -0.4 -0.6 -20 collector current vs. base to emitter voltage ic-collector current -ma -0.7 -5 -10 -50 -2 -0.5 -0.8 -0.9 -1 -100 -200 -500 -1000 v be -base to emitter voltage-v 0-4 -40 collector current vs. collector to emitter voltage -6 -20 -2 -8 -10 0 -60 -80 -100 v ce -collector to emitter voltage -v -1.0 ta=75 v ce =-0.6v pulsed t a = 2 5 ta=-25 ic-collector current -ma i b =-50 a i b =0 i b =-100 a i b =-150 a i b = - 2 0 0 a i b = - 2 5 0 a i b = - 3 0 0 a i b = - 3 5 0 a i b = - 4 0 0 a i b = - 4 5 0 a 0-0.8 -400 collector current vs. collector to emitter voltage -1.2 -200 -0.4 -1.6 -2.0 0 -600 -800 -1000 v ce -collector to emitter voltage -v ic-collector current -ma i b =-0.5ma i b =-1.0ma i b =-1.5ma i b =-2.0ma i b = -2.5ma i b = -3.0ma i b = -3.5ma i b = -4.0ma i b = -4.5ma i b = -5.0ma
utc 2SB798 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r208-020,a -1 -5 50 dc current gain vs.collector current hfe-dc current gain -10 20 -2 -20 -50 10 100 200 ic-collector current -a -100 -200 500 1000 -500 -1 -2 -5 v ce =1.0v pulsed ta=75 ta=25 ta=-25 -1 -5 -0.05 collector and base saturation voltage vs.collector current v be (sat)-base saturation voltage -v -10 -0.02 -2 -20 -50 -0.01 -0.1 -0.2 ic-collector current -a -100 -200 -0.5 -1 -500 -1 -2 -5 ic=10*i b pulsed -2 -5 -10 v ce (sat)-collector saturation voltage -v v be (sat) v ce (sat) 15 50 gain bandwidth product vs.emitter current ft-gain bandwidth product -mhz 10 20 220 10 100 200 i e -emitter current -ma 500 1000 50 100 200 500 1000 v ce =-6.0v v ce =-1.0v -0.1 -0.5 5 output capacitance vs. collector to base voltage cob-output capacitance -pf -1 2 -0.2 -2 1 10 20 v cb -collector to base voltage-v 50 100 -5 -10 -20 -50 -100 i e =0 f=1.0mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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