1.5v drive pch mosfet RW1A025AP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) small high power package. 3) low voltage drive.(1.5v) ? application switching ? packaging specifications ? inner circuit package taping code t2cr basic ordering unit (pieces) 8000 RW1A025AP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss 0 to ? 8 v continuous i d ? 2.5 a pulsed i dp ? 7.5 a continuous i s ? 0.5 a pulsed i sp ? 7.5 a power dissipation p d 0.7 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 179 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter wemt6 (6) (5) (4) (1) (2) (3) * *2 *1 *1 *2 *1 abbreviated symbol : sd (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ?1 esd protection diode ?2 body diode ?1 (4) (1) (2) ?2 (6) (5) (3) 1/6 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RW1A025AP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 10 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6v, i d = ? 1ma -4462 i d = ? 2.5a, v gs = ? 4.5v -5577 i d = ? 1.2a, v gs = ? 2.5v - 75 110 i d = ? 1.2a, v gs = ? 1.8v - 90 180 i d = ? 0.5a, v gs = ? 1.5v forward transfer admittance l y fs l 3.5 - - s i d = ? 2.5a, v ds = ? 6v input capacitance c iss - 2000 - pf v ds = ? 6v output capacitance c oss - 130 - pf v gs =0v reverse transfer capacitance c rss - 120 - pf f=1mhz turn-on delay time t d(on) - 11 - ns i d = ? 1.2a, v dd ? 6v rise time t r - 40 - ns v gs = ? 4.5v turn-off delay time t d(off) - 160 - ns r l =5 ? fall time t f - 60 - ns r g =10 ? total gate charge q g - 16 - nc i d = ? 2.5a gate-source charge q gs - 2.4 - nc v dd ? 6v gate-drain charge q gd - 2.2 - nc v gs = ? 4.5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 2.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RW1A025AP ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 v gs = - 1.2v v gs = - 1.0v v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v v gs = - 1.5v t a =25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 v gs = - 1.0v v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v v gs = - 1.5v v gs = - 1.2v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 1000 0.1 1 10 v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 2.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RW1A025AP 10 100 1000 0.1 1 10 v gs = - 1.8v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 1.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.1 1 10 v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.9 forward transfer admittance vs. drain current forward transfer admittance : |yfs| drain - current : - i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.10 reverse drain current vs. sourse - drain voltage reverse drain current : - i s [a] source - drain voltage : - v sd [v] 0 50 100 150 0 2 4 6 8 i d = - 2.5a i d = - 1.25a t a =25 c pulsed fig.11 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 0.01 0.1 1 10 100 t r t f t d(off) ta=25 c v dd = - 6v v gs = - 4.5v r g =10 w pulsed t d(on) fig.12 switching characteristics switching time : t [ns] drain - current : - i d [a] 4/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RW1A025AP 0 1 2 3 4 5 0 5 10 15 20 t a =25 c v dd = - 6v i d = - 2.5a pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 10 100 1000 10000 0.01 0.1 1 10 100 c oss c rss t a =25 c f=1mhz v gs =0v c iss drain - source voltage : - v ds [v] capacitance : c [pf] fig.13 typical capacitance vs. drain - source voltage 5/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RW1A025AP ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design es d protection circuit. v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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