power transistors 1 publication date: april 2003 c 2sb0950 (2SB950) , 2sb0950a (2SB950a) silicon pnp epitaxial planar type darlington for power amplification and switching complementary to 2sd1276 and 2sd1276a features ? high forward current transfer ratio h fe ? high-speed switching ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package parameter symbol rating unit collector-base voltage 2sb0950 v cbo ? 60 v (emitter open) 2sb0950a ? 80 collector-emitter voltage 2sb0950 v ceo ? 60 v (base open) 2sb0950a ? 80 emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 4a peak collector current i cp ? 8a collector power p c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2sb0950 v ceo i c = ? 30 ma, i b = 0 ? 60 v (base open) 2sb0950a ? 80 base-emitter voltage v be v ce = ? 3 v, i c = ? 3 a ? 2.5 v collector-base cutoff 2sb0950 i cbo v cb = ? 60 v, i e = 0 ? 200 a current (emitter open) 2sb0950a v cb = ? 80 v, i e = 0 ? 200 collector-emitter cutoff 2sb0950 i ceo v ce = ? 30 v, i b = 0 ? 500 a current (base open) 2sb0950a v ce = ? 40 v, i b = 0 ? 500 emitter-base cutoff current (collector open) i ebo v eb = ? 5 v, i c = 0 ? 2ma forward current transfer ratio h fe1 v ce = ? 3 v, i c = ? 0.5 a 1 000 ? h fe2 * v ce = ? 3 v, i c = ? 3 a 1 000 10 000 collector-emitter saturation voltage v ce(sat)1 i c = ? 3 a, i b = ? 12 ma ? 2v v ce(sat)2 i c = ? 5 a, i b = ? 20 ma ? 4v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = ? 3 a, i b1 = ? 12 ma, i b2 = 12 ma 0.3 s storage time t stg v cc = ? 50 v 2 s fall time t f 0.5 s note) the part numbers in the parenthesis show conventional part number. 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r q p h fe2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 internal connection b c e www..net
2sb0950, 2sb0950a 2 sjd00029bed v ce(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 10 20 30 40 50 (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2w) (1) (4) (3) (2) collector power dissipation p c (w) ambient temperature t a ( c) 0 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 ? 5 ? 1 ? 2 ? 4 ? 3 t c =25?c ?.5ma ?.0ma ?.5ma ?.0ma ?.5ma ?.4ma ?.3ma ?.2ma i b =?.0ma collector current i c (a) collector-emitter voltage v ce (v) 0 ? 3.2 ? 0.8 ? 2.4 ? 1.6 0 ? 2 ? 4 ? 6 ? 8 ? 10 base-emitter voltage v be (v) collector current i c (a) v ce =?v 25?c t c =100?c ?5?c ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =250 25?c t c =100?c ?5?c ? 0.01 ? 0.1 ? 1 ? 10 10 2 10 3 10 4 10 5 10 6 forward current transfer ratio h fe collector current i c (a) v ce =?v t c =100?c 25?c ?5?c ? 0.1 ? 1 ? 10 ? 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c collector current i c (a) collector-emitter voltage v ce (v) ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 t=1ms t=10ms i cp i c 2sb0950a 2sb0950 non repetitive pulse t c =25?c dc 10 ? 2 10 ? 1 1 10 10 3 10 2 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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