schottky barrier diode rb162l-60 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) small power mold type. (pmds) 2) high switching speed 3) low forward voltage ? construction ? structure silicon epitaxial planer ? taping dimensions (unit : mm) ? absolute maximum ratings (tl=25 ? c) symbol v rm v r tj tstg ? electrical characteristics (tj=25 ? c) symbol unit v f v i r a storage temperature ? 40 to ? 150 ? c conditions junction temperature 150 ? c repetitive peak reverse voltage d? 0.5 60 v a one cycle peak value, tj=25 ? c parameter conditions limits unit forward current surge peak i fsm 60hz half sin wave, non-repetitive 20 a glass epoxy substrate mounted reverse voltage direct voltage 60 v average rectified forward current io 1.0 r-road, 60hz half sin wave reverse current - 4 100 i f =1.0a v r =60v max. forward voltage - 0.54 0.65 parameter min. typ. pmds 2.0 4.2 2. 0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 1/3 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb162l-60 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-l) 1 10 100 1000 1 10 100 ratings ability t ifsm 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave : 5.0kv 0 10 20 30 ave : 11.6ns tj=25 ? c i f =0.1a i r =0.1a irr=0.1*i r n=10pcs 1 10 100 110100 ratings ability 8.3ms ifsm 1cyc 8.3ms 0 20 40 60 80 100 120 ave : 80.8a 8.3ms ifsm 1cyc 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 0.1 1 10 100 1000 10000 100000 0 102030405060 tj=25 ? c tj=125 ? c tj=125 ? c tj=150 ? c 0.01 0.1 1 0 100 200 300 400 500 600 700 480 490 500 510 520 530 540 550 1 10 100 100 110 120 130 140 150 160 170 180 190 200 ave : 168.0pf tj=25 ? c f=1mhz v r =0v n=10pcs forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current : i r ( ? a) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals : ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r ( ? a) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth ( ? c/w) trr dispersion map reverse recovery time : trr(ns) tj=25 ? c v r =60v n=20pcs ave : 6.0 ? a ave : 515.2mv tj=25 ? c i f =1.0a n=20pcs electrostatic discharge test esd(kv) esd dispersion map tj=125 ? c tj=25 ? c tj=150 ? c tj=25 ? c its ability of peak surge forward current : i fsm (a) rth(j-a) on glass-epoxy substrade soldering land 2mm 2 rth(j-a) on glass-epoxy substrade soldering land 10mm 2 2/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb162l-60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.3 0.6 0.9 1.2 1.5 1.8 d.c. d=0.5 half sin wave d=0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 306090120150 d.c. d=0.5 half sin wave d=0.8 forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics ambient temperature : ta( ? c) derating curve"(io-ta) average rectified forward current : io(a) average rectified forward current : io(a) case temparature : tl( ? c) derating curve"(io-tl) t tj=150 ? c d=t/t t v r io v r =30v 0a 0v t t v r io 0a 0v on glass-epoxy substrate soldering land 2mm tj=150 ? c d=t/t v r =30v ambient temperature : ta( ? c) derating curve"(io-ta) average rectified forward current : io(a) t t v r io 0a 0v tj=150 ? c d=t/t v r =30v on glass-epoxy substrate soldering land 10mm 3/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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