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savantic semiconductor product specification silicon npn power transistors 2SD870 description with to-3 package built-in damper diode high voltage ,high speed low collector saturation voltage applications for color tv horizontal output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-collector voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i e emitter current -5 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD870 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =200m a;i c =0 5 v v cesat collector-emitter saturation voltage i c =4 a;i b =0.8 a 5.0 v v besat base-emitter saturation voltage i c =4 a;i b =0.8 a 1.5 v i cbo collector cut-off current v cb =500v;i e =0 10 a h fe dc current gain i c =1a ; v ce =5v 8 v f diode forward voltage i f =5a 2.0 v f t transition frequency i c =0.1a ; v ce =10v 3 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 165 pf t f fall time i c =4a;i b1 end =0.8a 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD870 package outline fig.2 outline dimensions

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