pj2n9012 pnp epitaxial silicon transistor 1-3 2002/01.rev.a 1w output amplifier of potable radios in class b push-pull operation high total power dissipation(pt=625mw) high collector current (ic=-500ma) complementary to 2n9013 excellent h ef linearity rating symbol value uint collector base voltage v cbo -40 v collector emitter voltage v ceo -20 v emitter base voltage v ebo -5 v collector current ic -500 a collector dissipation pc 625 w junction temperature tj 150 0 c storage temperature tstg -55 ~150 0 c characteristic symbol test conditions min typ max unit collector-base breakdown voltage collector-emitter brea kdown voltage emitter-base brea kdown voltage collector cut-off current emitter cut-off current dc current gain collector- base saturation voltage base-emitter saturation voltage base-emitter on voltage bv cbo bv ceo bv ebo i cbo i ebo h fe 1 h fe 2 v ce(sat) v be(sat) v be (on) i c = -100 - a , i e =0 i c = -1ma , i b =0 i e =-100 - a , i c =0 v cb = -25v , i e = 0 v eb = -3v , i c =0 v eb = -1v, i c =-50ma v eb = -1v, i c =-500ma i c = -500 ma , i b =-50ma i c = -500ma , i b =-50ma v ce =-1v, ic =-10ma -40 -20 -5 64 40 0.58 120 90 0.14 0.84 0.63 -100 -100 202 0.3 1.0 0.7 v v v na na v v v device operating temperature package pj2n9012ct to-92 pj2n9012cx -20 +85 sot-23 classification d e f g h h ef 64-91 78-112 96-135 112-166 144-202 absolute maximum ratings (ta= 25 ) electrical characteristics (ta= 25 0 c ) h ef classification to-92 sot-23 ordering information pin : 1.emitter 2.base 3.collector pin : 1. base 2. emitter 3. collector www.datasheet.co.kr datasheet pdf - http://www..net/
pj2n9012 pnp epitaxial silicon transistor 2-3 2002/01.rev.a static characteristic base-emitter sat uration voltage collector-emitter sat uration voltage dc current gain current gain-bandwidth product www.datasheet.co.kr datasheet pdf - http://www..net/
pj2n9012 pnp epitaxial silicon transistor 3-3 2002/01.rev.a www.datasheet.co.kr datasheet pdf - http://www..net/
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