tsm2310 20v n - channel mosfet 1 / 6 version: b09 sot - 23 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm2310cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v i d 4 a pulsed drain current, v gs @4.5v i dm 15 a continuous source current (diode conduction) a,b i s 1.0 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symb ol limit unit junction to case thermal resistance r? jf 75 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 1 60 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 33 @ v gs = 4.5v 4 40 @ v gs = 2.5v 3.2 20 100 @ v gs = 1.8v 2.0 block diagram n - channel mosfet pin definition : 1. gate 2. source 3. drain
tsm2310 20v n - channel mosfet 2 / 6 version: b09 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 0.6 0.8 1 .2 v gate body leakage v gs = 4.5v, v ds = 0v i gss -- -- 1 00 n a zero gate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 a on - state drain current v ds 10v, v gs = 4.5v i d(on) 15 -- -- a v gs = 4.5v, i d = 4 a -- 2 4 30 v gs = 2.5v, i d = 3.2 a -- 3 2 40 drain - source on - state resistance v gs = 1.8v, i d = 2 a r ds(on) -- 80 100 m forward transconductance v ds = 1 5v, i d = 4 a g fs -- 40 -- s diode forward voltage i s = 1.6 a, v gs = 0v v sd -- 0.8 1.2 v dynamic b total gate charge q g -- 8.6 -- gate - source charge q gs -- 2 -- gate - drain charge v ds = 10v, i d = 4 a, v gs = 4.5v q gd -- 2. 7 -- nc input capacitance c iss -- 55 0 -- output capacitance c oss -- 10 0 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 3 0 -- pf switching c turn - on delay time t d(on) -- 15 -- turn - on rise time t r -- 20 -- turn - off delay time t d(off) -- 40 -- turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 8 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to product ion testing. b. switching time is essentially independent of operating temperature.
tsm2310 20v n - channel mosfet 3 / 6 version: b09 electrical characteristics curve ( ta = 25 \ o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain cur rent gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm2310 20v n - channel mosfet 4 / 6 version: b09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse power n ormalized thermal transient impedance, junction - to - ambient
tsm2310 20v n - channel mosfet 5 / 6 version: b09 sot - 23 mechanical drawing marking diagram 10 = device code y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =de c) l = lot code sot - 23 dimension millimeters inches dim min max min max. a 0.95 bsc 0.037 bsc a1 1.9 bsc 0.074 bsc b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 5 10 5 10
tsm2310 20v n - channel mosfet 6 / 6 version: b09 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies . information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk an d agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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