savantic semiconductor product specification silicon npn power transistors bd895a/897a/899a description with to-220c package complement to type bd896a/898a/900a darlington applications for use in output stages in audio equipment ,general amplifier,and analogue switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit bd895a 45 BD897A 60 v cbo collector-base voltage bd899a open emitter 80 v bd895a 45 BD897A 60 v ceo collector-emitter voltage bd899a open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 8 a i b base current 300 ma t c =25 70 p t total power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors bd895a/897a/899a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bd895a 45 BD897A 60 v (br)ceo collector-emitter breakdown voltage bd899a i c =100ma, i b =0 80 v v cesat collector-emitter saturation voltage i c =4a ,i b =16ma 2.8 v v be base-emitter on voltage i c =4a ; v ce =3v 2.5 v bd895a v cb =45v, i e =0 t c =100 0.2 2.0 BD897A v cb =60v, i e =0 t c =100 0.2 2.0 i cbo collector cut-off current bd899a v cb =80v, i e =0 t c =100 0.2 2.0 ma bd895a v ce =30v, i b =0 BD897A v ce =30v, i b =0 i ceo collector cut-off current bd899a v ce =40v, i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe dc current gain i c =4a ; v ce =3v 750 v ec diode forward voltage i e =8a 3.5 v t on turn-on time 1 s t off turn-off time i c =3a ; i b1 =-i b2 =12ma v be =-3.5v;r l =10 b ;t p =20s 5 s thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.79 /w
savantic semiconductor product specification 3 silicon npn power transistors bd895a/897a/899a package outline fig.2 outline dimensions
|
