november 1995 2n7000 / 2n7002 / nds7002a n-channel enhancement mode field effect transistor general description features ___________________________________________________________________________________________ absolute maximum ratings t a = 25c unless otherwise noted symbol parameter 2n7000 2n7002 nds7002a units v dss drain-source voltage 60 v v dgr drain-gate voltage (r gs < 1 m w ) 60 v v gss gate-source voltage - continuous 20 v - non repetitive (tp < 50s) 40 i d maximum drain current - continuous 200 115 280 ma - pulsed 500 800 1500 p d maximum power dissipation 400 200 300 mw derated above 25 o c 3.2 1.6 2.4 mw/c t j ,t stg operating and storage temperature range -55 to 150 -65 to 150 c t l maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 300 c thermal characteristics r q ja thermal resistance, junction-to-ambient 312.5 625 417 c/w 2n7000 .sam rev. a1 these n -c hannel enhancement mode field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 400ma dc and can deliver pulsed currents up to 2a. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. high density cell design for low r ds(on) . voltage controlled small signal switch. rugged and reliable. high saturation current capability. s d g s g d to- 92 ? 1997 fairchild semiconductor corporation 2 n7000 ( to -2 36 a b ) 2 n7 00 2 / nds 70 02 a
electrical characteristics t a = 25c unless otherwise noted symbol parameter conditions typ e min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 10 a all 60 v i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v 2n 7000 1 a t j =125c 1 ma v ds = 60 v, v gs = 0 v 2n 7002 nds7002a 1 a t j =125c 0.5 m a i gssf gate - body leakage, forward v gs = 15 v, v ds = 0 v 2n7000 10 na v gs = 20 v, v ds = 0 v 2n7002 nds7002a 100 na i gssr gate - body leakage, reverse v gs = -15 v, v ds = 0 v 2n 7000 -10 na v gs = -20 v, v ds = 0 v 2n7002 nds7002a -100 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = 1 m a 2n7000 0.8 2.1 3 v v ds = v gs , i d = 250 a 2n7002 nds7002a 1 2.1 2.5 r ds(on) static drain-source on-resistance v gs = 10 v, i d = 500 m a 2n7000 1.2 5 w t j =125c 1.9 9 v gs = 4.5 v, i d = 75 m a 1.8 5.3 v gs = 10 v, i d = 500 m a 2n7002 1.2 7.5 t j =100c 1.7 13.5 v gs = 5.0 v, i d = 50 m a 1.7 7.5 t j =100c 2.4 13.5 v gs = 10 v, i d = 500 m a nds7002 a 1.2 2 t j =125c 2 3.5 v gs = 5.0 v, i d = 50 m a 1.7 3 t j =125c 2.8 5 v ds(on) drain-source on-voltage v gs = 10 v, i d = 500 m a 2n7000 0.6 2.5 v v gs = 4.5 v, i d = 75 m a 0.14 0.4 v gs = 10 v, i d = 500m a 2n7002 0.6 3.75 v gs = 5.0 v, i d = 50 m a 0.09 1.5 v gs = 10 v, i d = 500m a nds7002a 0.6 1 v gs = 5.0 v, i d = 50 m a 0.09 0.15 2n7000 .sam rev. a1
electrical characteristics t a = 25 o c unless otherwise noted symbol parameter conditions typ e min typ max units on characteristics continued (note 1) i d(on) on-state drain current v gs = 4.5 v, v ds = 10 v 2n7000 75 600 ma v gs = 10 v, v ds > 2 v ds(on) 2n7002 500 2700 v gs = 10 v, v ds > 2 v ds(on) nds7002a 500 2700 g fs forward transconductance v ds = 10 v, i d = 200 m a 2n7000 100 320 ms v ds > 2 v ds(on) , i d = 200 m a 2n7002 80 320 v ds > 2 v ds(on) , i d = 200 m a nds7002a 80 320 dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz all 20 50 pf c oss output capacitance all 11 25 pf c rss reverse transfer capacitance all 4 5 pf t on turn-on time v dd = 15 v, r l = 25 w , i d = 500 ma , v gs = 10 v, r gen = 25 2n7000 10 ns v dd = 30 v, r l = 150 w , i d = 200 ma , v gs = 10 v, r gen = 25 w 2n700 nds7002a 20 t off turn-off time v dd = 15 v, r l = 25 w , i d = 500 ma , v gs = 10 v, r gen = 25 2n7000 10 ns v dd = 30 v, r l = 150 w , i d = 200 ma , v gs = 10 v, r gen = 25 w 2n700 nds7002 a 20 drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2n7002 115 ma nds7002a 280 i sm maximum pulsed drain-source diode forward current 2n7002 0.8 a nds7002a 1.5 v sd drain-source diode forward voltage v gs = 0 v, i s = 115 m a (note 1) 2n7002 0.88 1.5 v v gs = 0 v, i s = 400 m a (note 1) nds7002 a 0.88 1.2 note: 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2n7000 .sam rev. a1
2n7000 .sam rev. a1 0 1 2 3 4 5 0 0.5 1 1.5 2 v , drain-source voltage (v) i , drain-source current (a) 9.0 4.0 8.0 3.0 7.0 v = 10v gs ds d 5.0 6.0 -50 -25 0 25 50 75 100 125 150 0.5 0.75 1 1.25 1.5 1.75 2 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v = 10v gs i = 500ma d -50 -25 0 25 50 75 100 125 150 0.8 0.85 0.9 0.95 1 1.05 1.1 t , junction temperature (c) gate-source threshold voltage j i = 1 ma d v = v ds gs v , normalized th 0 0.4 0.8 1.2 1.6 2 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance v =4.0v gs d r , normalized ds(on) 7.0 4.5 10 5.0 6.0 9.0 8.0 0 0.4 0.8 1.2 1.6 2 0 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance t = 125c j 25c -55c d v = 10v gs r , normalized ds(on) typical electrical characteristics figure 1. on-region characteristics figure 2. on-resistance variation wit h gate voltage and drain current figure 3. on-resistance variation with temperature figure 4. on-resistance variation with drain current and temperature figure 5. transfer characteristics figure 6. gate threshold variation with temperature 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d t = -55c j 25c 125c 2n7000 / 2n7002 / nds7002a
2n7000 .sam rev. a1 -50 -25 0 25 50 75 100 125 150 0.925 0.95 0.975 1 1.025 1.05 1.075 1.1 t , junction temperature (c) drain-source breakdown voltage j bv , normalized dss i = 250a d 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.005 0.01 0.05 0.1 0.5 1 2 v , body diode forward voltage (v) i , reverse drain current (a) v = 0v gs t = 125c j sd s 25c -55c 0 0.4 0.8 1.2 1.6 2 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i =500ma d v = 25v ds 115ma 280ma 1 2 3 5 10 20 30 50 1 2 5 10 20 40 60 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0v gs c oss c rss g d s v dd r l v v in out v gs dut r gen 10% 50% 90% 10% 90% 90% 50% input, v in output, v out t on t off t d(off) t f t r t d(on) inverted 10% pulse width figure 7. breakdown voltage variation with temperature figure 8. body diode forward voltage variation with figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. figure 12. switching waveforms typical electrical characteristics (continued) 2n7000 / 2n7002 /nds7002a
2n7000 .sam rev. a1 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.01 0.05 0.1 0.2 0.5 1 t , time (sec) t r a n s i e n t t h e r m a l r e s i s t a n c e r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = (see datasheet) q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) t r a n s i e n t t h e r m a l r e s i s t a n c e r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = (see datasheet) q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 1 2 5 10 20 30 60 80 0.005 0.01 0.05 0.1 0.5 1 2 3 v , drain-source voltage (v) i , drain current (a) ds d v = 10v single pulse t = 25c gs a rds(on) limit 100ms 1ms 10ms dc 1s 100us 10s figure 16. to-92, 2n7000 transient thermal response curve figure 17 . sot-23, 2n7002 / nds7002a transient thermal response curve 1 2 5 10 20 30 60 80 0.005 0.01 0.05 0.1 0.5 1 2 3 v , drain-source voltage (v) i , drain current (a) ds d v = 10v single pulse t = 25c gs a rds(on) limit 100ms 1ms 10ms dc 1s 10s 100us 1 2 5 10 20 30 60 80 0.005 0.01 0.05 0.1 0.5 1 2 3 v , drain-source voltage (v) i , drain current (a) ds d v = 10v single pulse t = 25c gs a rds(on) limit 100ms 1ms 10ms dc 1s 10s 100us figure 13. 2n7000 maximum safe operating area figure 14. 2n7002 maximum safe operating area figure 15. nds7000a maximum safe operating area typical electrical characteristics (continued)
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
|
