issue 2 - january 2000 zxt13p40de6 supersot4? 40v pnp silicon low saturation switching transistor summary v ceo =-40v; r sat = 58m ;i c = -3a description this new 4th generation ultra low saturation transistor utilises the zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. this makes it ideal for high efficiency, low voltage switching applications. features ? extremely low equivalent on resistance ? extremely low saturation voltage ? h fe characterised up to 5a ? i c =3a continuous collector current ? sot23-6 package applications ? dc - dc converters ? power management functions ? power switches ? motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXT13P40DE6TA 7 8mm embossed 3000 units zxt13p40de6tc 13 8mm embossed 10000 units device marking p40d top view 1 sot23-6 c e b c c c
issue 2 - january 2000 zxt13p40de6 thermal resistance parameter symbol v alue unit junction to ambient (a) r ja 113 c/w junction to ambient (b) r ja 73 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. 2 absolute maximum ratings. parameter symbol limit unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -7.5 v peak pulse current i cm -10 a continuous collector current i c -3 a base current i b -500 ma power dissipation at ta=25c (a) linear derating factor p d 1.1 8.8 w mw/c power dissipation at ta=25c (b) linear derating factor p d 1.7 13.6 w mw/c operating and storage temperature range t j :t stg -55 to +150 c
issue 2 - january 2000 zxt13p40de6 100m 1 10 10m 100m 1 10 single pulse tamb=25c 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 derating curve temperature (c) m ax pow er dissipation (w ) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 therm al resistance (c/w ) pulse width (s) typical characteristics 3
issue 2 - january 2000 zxt13p40de6 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 -80 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -40 -70 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -7.5 -8.5 v i e =-100 a collector cut-off current i cbo -100 na v cb =-40v emitter cut-off current i ebo -100 na v eb =-6v collector emitter cut-off current i ces -100 na v ces =-40v collector-emitter saturation voltage v ce(sat) -16 -110 -145 -175 -25 -200 -190 -240 mv mv mv mv i c =-0.1a, i b =-10ma* i c =-1a, i b =-20ma* i c =-2a, i b =-100ma* i c =-3a, i b =-300ma* base-emitter saturation voltage v be(sat) -1.1 v i c =-3a, i b =-300ma* base-emitter turn-on voltage v be(on) -0.9 v i c =-3a, v ce =-2v* static forward current transfer ratio h fe 300 300 100 15 500 450 250 50 900 i c =-10ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-3a, v ce =-2v* i c =-5a, v ce =-2v* transition frequency f t 115 mhz i c =-50ma, v ce =-10v f=50mhz output capacitance c obo 42 pf v cb =-10v, f=1mhz turn-on time t (on) 185 ns v cc =-10v, i c =-1a i b1 =i b2 =-20ma turn-off time t (off) 400 ns *measured under pulsed conditions. pulse width=300 s. duty cycle 2% 4
issue 2 - january 2000 zxt13p40de6 1m 10m 100m 1 10 1m 10m 100m v ce(sat) vi c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 v ce(sat) vi c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 h fe vi c v ce =2v -55c 25c 100c n orm alised g ain i c collector current (a) 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 v be(sat) vi c i c /i b =50 100c 25c -55c v be(sat) (v) i c collector current (a) 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 v be(on) vi c v ce =2v 100c 25c -55c v be(o n ) (v) i c collector current (a) typical characteristics 5
issue 2 - january 2000 zxt13p40de6 package dimensions pad layout details 6 zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1999 telefon: (49) 89 45 49 49 0 telephone: (631) 543-7100 telephone:(852) 26100 611 fax: (49) 89 45 49 49 49 fax: (631) 864-7630 fax: (852) 24250 494 internet :http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services conce rned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. a1 2 l datum a a c e aa2 e1 d b e e1 dim millimetres inches min max min max a 0.90 1.45 0.35 0.057 a1 0.00 0.15 0 0.006 a2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 c 0.09 0.20 0.0035 0.008 d 2.80 3.00 0.110 0.118 e 2.60 3.00 0.102 0.118 e1 1.50 1.75 0.059 0.069 l 0.10 0.60 0.004 0.002 e 0.95 ref 0.037 ref e1 1.90 ref 0.074 ref l 0 10 0 10
|
