tsm6n50 500v n-channel power mosfet 1/10 version: b11 ito - 220 to - 252 (dpak) to - 251 (ipak) product summary v ds (v) r ds(on) ( ) i d (a) 500 1.4 @ v gs =10v 2.8 general description the tsm6n50 n-channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superio r switching performance, and withstand high energy pulse in the avalanche and commutation mode. features low r ds(on) 1.4 (max.) low gate charge typical @ 25nc (typ.) low crss typical @ 15pf (typ.) fast switching ordering information part no. package packing tsm6n50ci c0 ito-220 50pcs / tube tsm6n50cp ro to-252 2.5kpcs / 13 reel tsm6n50ch c5 to-251 75pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 v continuous drain current ta = 25oc i d 5 a ta = 100oc 3 a pulsed drain current * i dm 15 a single pulse avalanche energy (note 2) e as 180 mj avalanche current (repetitive) (note 1) i ar 5 a total power dissipation @ t c = 25 o c ito-220 p tot 25 w to-252. to-251 90 operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case ito-220 r ? jc 5 o c/w to-252. to-251 2.78 thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm6n50 500v n-channel power mosfet 2/10 version: b11 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 500 -- -- v drain-source on-state resistance v gs = 10v, i d = 2.8a r ds(on) -- 1.15 1.4 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 500v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 10 ua forward transfer conductance v ds = 8v, i d = 1a g fs -- 2.6 -- s dynamic b total gate charge v ds = 400v, i d = 5a, v gs = 10v q g -- 25 33 nc gate-source charge q gs -- 5 -- gate-drain charge q gd -- 10 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 680 900 pf output capacitance c oss -- 85 110 reverse transfer capacitance c rss -- 15 20 switching c turn-on delay time v gs = 10v, i d = 5a, v dd = 250v, r g =25 t d(on) -- 20 50 ns turn-on rise time t r -- 40 90 turn-off delay time t d(off) -- 90 190 turn-off fall time t f -- 45 100 source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 5 a source current (pulse) i sm -- -- 15 a diode forward voltage i s = 5a, v gs = 0v v sd -- -- 1.6 v reverse recovery time v gs = 0v, i s = 5a, di f /dt = 100a/us t fr -- 430 -- ns reverse recovery charge q fr -- 2 -- uc note 1: repetitive rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =5a, l=10mh, starting t j =25oc note 3: pulse test: pulse width 300us, duty cycle 2% note 4: essentially independent of operating temperature .
tsm6n50 500v n-channel power mosfet 3/10 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm6n50 500v n-channel power mosfet 4/10 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm6n50 500v n-channel power mosfet 5/10 version: b11 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm6n50 500v n-channel power mosfet 6/10 version: b11 diode reverse recovery time test circuit & waveform
tsm6n50 500v n-channel power mosfet 7/10 version: b11 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm6n50 500v n-channel power mosfet 8/10 version: b11 to-251 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 c 0.35 0.65 0.014 0.026 c1 0.40 0.60 0.016 0.024 d 5.30 5.70 0.209 0.224 e 6.30 6.70 0.248 0.264 e 2.30 bsc 0.09 bsc l 7.00 8.00 0.276 0.315 l1 1.40 1.80 0.055 0.071 l2 1.30 1.70 0.051 0.067 l3 0.50 0.90 0.020 0.035
tsm6n50 500v n-channel power mosfet 9/10 version: b11 to-252 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
tsm6n50 500v n-channel power mosfet 10/10 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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