2SC2001 0.7 a , 30 v npn plastic encapsulated transistor elektronische bauelemente 17-feb-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high h fe and low v ce(sat) h fe (i c =100ma) 200(typ) v ce(sat) (700ma) 0.2v(typ) classification of h fe product-rank 2SC2001-m 2SC2001-l 2SC2001-k range 90~180 135~270 200~400 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.7 a collector power dissipation p c 0.6 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 30 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 25 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut ? off current i cbo - - 0.1 a v cb =30v, i e =0 collector cut ? off current i ceo - - 0.1 a v ce =20v, i b =0 emitter cut ? off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe 90 - 400 v ce =1v, i c =100ma collector to emitter saturation voltage v ce(sat) - - 0.6 v i c =700ma, i b =70ma base to emitter voltage v be(sat) - - 1.2 v i c =700ma, i b =70ma transition frequency f t 50 - - mhz v ce =6v, i c =10ma, f=30mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
2SC2001 0.7 a , 30 v npn plastic encapsulated transistor elektronische bauelemente 17-feb-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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