baw75, BAW76 small signal diodes features silicon epitaxial planar diode fast switching diode. mechanical data case: do-35 glass case weight: approx. 0.13 g maximum ratings ratings at 25? ambient temperature unless otherwise specified. symbol value unit reverse voltage baw75 v r 25 volts BAW76 v r 50 volts peak reverse voltage baw75 v rm 35 volts BAW76 v rm 75 volts rectified current (average) half wave rectification with resist. load i 0 150 1) ma at t a = 25 ? and f 3 50 hz surge forward current at t < 1 m s and t j = 25? i fsm 2 amps power dissipation at t a = 25? p tot 500 1) mw junction temperature t j 200 ? storage temperature range t s ?65 to +200 ? notes (1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. dimensions in inches and (millimeters) do-35 min. 1.083 (27.5) min. 1.083 (27.5) max. .150 (3.8) max. ? cathode .020 (0.52) mark max. ? .079 (2.0) 11/30/98 dimensions in inches and (millimeters) advanced information
baw75, BAW76 electrical characteristics ratings at 25 ? ambient temperature unless otherwise specified symbol min. max. unit forward voltage at i f = 30 ma baw75 v f ?v at i f = 100 ma BAW76 v f ?v leakage current at v r = 25 v baw75 i r 100 na at v r = 25 v, t j = 150? baw75 i r 100 m a at v r = 50v BAW76 i r 100 na at v r = 50 v, tj =150? BAW76 i r 100 m a reverse breakdown voltage tested with 5 m a pulses baw75 v (br)r 35 v BAW76 v (br)r 75 v capacitance at v f = v r = 0 v baw75 c tot ?pf BAW76 c tot ?pf reverse recovery time from i f = 10 ma through i r = 10 ma to i r = 1 ma t rr ?ns from i f = 10 ma to i r = 1 ma, v r = 6 v, r l = 100 w t rr ?ns thermal resistance junction to ambient air r q ja 0.35 1) k/mw notes: (1) valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
ratings and characteristics curves baw75, BAW76 baw75, BAW76 baw75, BAW76 baw75, BAW76 baw75, BAW76
ratings and characteristics curves baw75, BAW76 v r = 25v v r = 50v baw75 BAW76 baw75, BAW76
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