? semiconductor components industries, llc, 2009 august, 2009 ? rev. 3 1 publication order number: mmbth10lt1/d mmbth10lt1g, MMBTH10-4LT1G vhf/uhf transistor npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector-emitter voltage v ceo 25 vdc collector-base voltage v cbo 30 vdc emitter-base voltage v ebo 3.0 vdc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient (note 1) r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient (note 2) r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina device package shipping ? ordering information mmbth10lt1g sot ? 23 (pb ? free) 3000/tape & reel mmbth10 ? 4lt1g sot ? 23 (pb ? free) 3000/tape & reel collector 3 1 base 2 emitter http://onsemi.com mmbth10lt3g sot ? 23 (pb ? free) 10000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagrams sot ? 23 (to ? 236ab) case 318 style 6 1 2 3 3em m mmbth10lt1g 3e4 m mmbth10 ? 04lt1g 3em, 3e4 = specific device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location.
mmbth10lt1g, mmbth10 ? 4lt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 25 ? ? vdc collector ? base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 30 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 3.0 ? ? vdc collector cutoff current (v cb = 25 vdc, i e = 0) i cbo ? ? 100 nadc emitter cutoff current (v eb = 2.0 vdc, i c = 0) i ebo ? ? 100 nadc on characteristics dc current gain (i c = 4.0 madc, v ce = 10 vdc) mmbth10lt1 mmbth10 ? 4lt1 h fe 60 120 ? ? ? 240 ? collector ? emitter saturation voltage (i c = 4.0 madc, i b = 0.4 madc) v ce(sat) ? ? 0.5 vdc base ? emitter on voltage (i c = 4.0 madc, v ce = 10 vdc) v be ? ? 0.95 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 4.0 madc, v ce = 10 vdc, f = 100 mhz) mmbth10lt1 mmbth10 ? 4lt1 f t 650 800 ? ? ? ? mhz collector ? base capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb ? ? 0.7 pf common ? base feedback capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c rb ? ? 0.65 pf collector base time constant (i c = 4.0 madc, v cb = 10 vdc, f = 31.8 mhz) rb c c ? ? 9.0 ps
mmbth10lt1g, mmbth10 ? 4lt1g http://onsemi.com 3 typical characteristics 600 f, frequency (mhz) figure 1. rectangular form g ib (mmhos) figure 2. polar form f, frequency (mhz) figure 3. rectangular form g fb (mmhos) figure 4. polar form 70 60 50 10 0 -10 0204060 0 80 100 70 60 50 40 30 20 0 60 30 20 10 10 30 50 70 -10 10 200 300 400 500 700 1000 80 -20 -30 -40 -50 -60 40 30 20 -20 -30 50 40 100 200 300 400 500 700 1000 0 -10 -20 -30 30 20 10 40 70 60 50 b fb -g fb 100 200 400 700 1000 mhz 1000 mhz 100 200 400 700 g ib -b ib jb (mmhos) ib jb (mmhos) fb , forward transfer admittance (mmhos) , input admittance (mmhos) ib y fb , forward transfer admittance common ? base y parameters versus frequency (v cb = 10 vdc, i c = 4.0 madc, t a = 25 c) y ib , input admittance ib y y
mmbth10lt1g, mmbth10 ? 4lt1g http://onsemi.com 4 typical characteristics f, frequency (mhz) figure 5. rectangular form g rb (mmhos) figure 6. polar form f, frequency (mhz) figure 7. rectangular form g ob (mmhos) figure 8. polar form 0 2.0 4.0 6.0 8.0 10 -2.0 -1.2 -0.4 0.4 0 -5.0 1.2 2.0 10 4.0 2.0 0 -1.8 -0.8 0 0.8 1.6 8.0 6.0 -4.0 -3.0 -2.0 -1.0 100 4.0 3.0 1.0 0 200 300 400 500 700 1000 5.0 100 200 300 400 500 700 1000 0 3.0 2.0 1.0 4.0 7.0 6.0 5.0 10 9.0 8.0 2.0 b ob g ob -b rb -b rb -g rb mps h11 mps h10 100 200 400 700 1000 mhz 100 200 400 700 1000 mhz jb (mmhos) rb jb (mmhos) ob , output admittance (mmhos) ob , reverse transfer admittance (mmhos) rb y ob , output admittance common ? base y parameters versus frequency (v cb = 10 vdc, i c = 4.0 madc, t a = 25 c) y rb , reverse transfer admittance y y
mmbth10lt1g, mmbth10 ? 4lt1g http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbth10lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
