? semiconductor components industries, llc, 2006 april, 2006 ? rev. 8 1 publication order number: NID5001N/d NID5001N self?protected fet with temperature and current limit hdplus devices are an advanced series of power mosfets which utilize on semicondutor?s latest mosfet technology process to achieve the lowest possible on?resistance per silicon area while incorporating smart features. integrated thermal and current limits work together to provide short circuit protection. the devices feature an integrated drain?to?gate clamp that enables them to withstand high energy in the avalanche mode. the clamp also provides additional safety margin against unexpected voltage transients. electrostatic discharge (esd) protection is provided by an integrated gate?to?source clamp. features ? low r ds(on) ? current limitation ? thermal shutdown with automatic restart ? short circuit protection ? i dss specified at elevated temperature ? avalanche energy specified ? slew rate control for low noise switching ? overvoltage clamped protection ? pb?free package is available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage internally clamped v dss 42 vdc drain?to?gate voltage internally clamped (r gs = 1.0 m ) v dgr 42 vdc gate?to?source v oltage v gs 14 vdc drain current ? continuous i d internally limited total power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 64 1.0 1.56 w thermal resistance, junction?to?case junction?to?ambient (note 1) junction?to?ambient (note 2) r jc r ja r ja 1.95 120 80 c/w single pulse drain?to?source avalanche energy (v dd = 25 vdc, v gs = 5.0 vdc, i l = 4.5 apk, l = 120 mh, r g = 25 ) e as 1215 mj operating and storage temperature range t j , t stg ?55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. minimum fr4 pcb, steady state. 2. mounted onto a 2 square fr4 board (1 square, 2 oz. cu 0.06 thick single?sided, t = steady state). device package shipping ? ordering information NID5001Nt4 dpak 2500/tape & reel dpak case 369c style 2 m pwr drain source temperature limit gate input marking diagram y = year ww = work week d5001n = device code g = pb?free package current limit current sense r g overvoltage protection esd protection http://onsemi.com yww d50 01ng *max current may be limited below this value depending on input conditions. 1 = gate 2 = drain 3 = source 1 2 3 v dss (clamped) r ds(on) typ i d max (limited) 42 v 23 m @ 10 v 33 a* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NID5001Nt4g dpak (pb?free) 2500/tape & reel
NID5001N http://onsemi.com 2 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source clamped breakdown voltage (v gs = 0 vdc, i d = 250 adc) (v gs = 0 vdc, i d = 250 adc, t j = 150 c) v (br)dss 42 42 46 44 50 50 vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) (v ds = 32 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.5 6.5 5.0 adc gate input current (v gs = 5.0 vdc, v ds = 0 vdc) i gssf 50 100 adc on characteristics gate threshold voltage (v ds = v gs , i d = 1.2 madc) threshold temperature coefficient v gs(th) 1.0 1.8 5.0 2.0 vdc ?mv/ c static drain?to?source on?resistance (note 3) (v gs = 10 vdc, i d = 5.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 5.0 adc, t j @ 150 c) r ds(on) 23 43 29 55 m static drain?to?source on?resistance (note 3) (v gs = 5.0 vdc, i d = 5.0 adc, t j @ 25 c) (v gs = 5.0 vdc, i d = 5.0 adc, t j @ 150 c) r ds(on) 28 50 34 60 m source?drain forward on voltage (i s = 5 a, v gs = 0 v) v sd 0.80 1.1 v switching characteristics turn?on time v gs = 5.0 v dc , v dd = 25 v dc i d = 1.0 a dc , ext r g = 2.5 t (on) 32 40 s turn?off time t (off) 68 75 turn?on time v gs = 10 v dc , v dd = 25 v dc, i d = 1.0 a dc , ext r g = 2.5 t (on) 11 15 turn?off time t (off) 86 95 slew rate on r l = 4.7 , v in = 0 to 10 v, v dd = 12 v ?dv ds /dt on 0.5 v s slew?rate off r l = 4.7 , v in = 10 to 0 v, v dd = 12 v dv ds /dt off 0.35 v s self protection characteristics (t j = 25 c unless otherwise noted) current limit (v gs = 5.0 vdc) v ds = 10 v (v gs = 5.0 vdc, t j = 150 c) i lim 21 12 30 19 36 30 adc (v gs = 10 vdc) v ds = 10 v (v gs = 10 vdc, t j = 150 c) 29 13 41 24 49 31 temperature limit (turn?off) v gs = 5.0 vdc t lim(off) 150 175 200 c temperature limit (circuit reset) v gs = 5.0 vdc t lim(on) 135 160 185 c temperature limit (turn?off) v gs = 10 vdc t lim(off) 150 165 185 c temperature limit (circuit reset) v gs = 10 vdc t lim(on) 135 150 170 c esd electrical characteristics (t j = 25 c unless otherwise noted) electro?static discharge capability human body model (hbm) machine model (mm) esd 4000 400 v 3. pulse test: pulse width 300 s, duty cycle 2%.
NID5001N http://onsemi.com 3 typical performance curves 100 c 0 28 2.5 16 3 1.5 1 v ds , drain?to?source voltage (volts) i d, drain current (amps) 12 4 0 0.5 figure 1. on?region characteristics 1 28 2 16 12 4 4 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 0.05 46 0.1 0 figure 3. on?resistance vs. gate?to?source voltage v gs , gate?to?source voltage (volts) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) 61 0 0.02 figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 0 ?25 25 1.4 1.2 1 0.8 0.6 50 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.2 35 t c = ?55 c i d = 5 a t j = 25 c 0.035 0.015 75 t j = 25 c i d = 5 a v gs = 10 v r ds(on), drain?to?source resistance (normalized) 2 25 c r ds(on), drain?to?source resistance ( ) 1.6 v gs = 10 v 2.6 v 210 100 4 5 25 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 15 v gs = 0 v i dss , leakage (a) t j = 150 c t j = 100 c 2.8 v 3.0 v 3.2 v 0.03 v gs = 5 v 1000 10000 100000 3.5 4 4 v v ds 10 v 0.15 789 0.025 10 20 3.8 v 8 3.4 v 8 3 79 8 23 4 5 40 30 35 24 20 3.6 v v gs = 10 v to 4.2 v 20 24
NID5001N http://onsemi.com 4 typical performance curves 0.9 0.02 0 v sd , source?to?drain voltage (volts) figure 7. diode forward voltage vs. current i s , source current (amps) v gs = 0 v t j = 25 c 0.14 0.7 0.5 0.3 0.1 0.08 0.12 figure 8. maximum rated forward biased safe operating area 0.1 10 100 v ds , drain?to?source voltage (volts) i d , drain current (amps) v gs = 5 v single pulse t c = 25 c 1.0 1.0 100 0.01 10 dc 100 s 1 ms 10 ms r ds(on) limit thermal limit package limit 0.1 0.8 0.6 0.4 0.06 0.04 based upon a t j = 100 c, steady state.
NID5001N http://onsemi.com 5 package dimensions dpak case 369c?01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nid5001/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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