switching diodes 1 publication date: march 2004 skf00018bed note) * :t = 1 s ma3j142d (MA142WA) , ma3j142e (ma142wk) silicon epitaxial planar type for switching circuits features ? two isolated elements contained in one package, allowing high- density mounting absolute maximum ratings t a = 25 c unit: mm parameter symbol conditions min typ max unit forward voltage v f i f = 100 ma 1.2 v reverse voltage v r i r = 100 a80v reverse current i r v r = 75 v 100 na terminal capacitance ma3j142d c t v r = 0 v, f = 1 mhz 15 pf ma3j142e 2 reverse recovery time * ma3j142d t rr i f = 10 ma, v r = 6 v 10 ns ma3j142e i rr = 0.1 i r , r l = 100 ? 3 electrical characteristics t a = 25 c 3 c bias application unit (n-50bu) 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = 10 ma v r = 6 v r l = 100 ? 10% input pulse output pulse i rr = 0.1 i r t r t p t rr v r i f t t a note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. absolute frequency of input and output is 100 mhz. 3. * : t rr measurement circuit note) the part numbers in the parenthesis show conventional part number. marking symbol: ? ma3j142d: mo ? ma3j142e: mu internal connection 12 3 1 3 2 ma3j142d ma3j142e 1 cathode 1 anode 1 2 cathode 2 anode 2 3 anode cathode 0.3 2.0 0.2 1.3 0.1 (0.65) 1 3 2 (0.65) 0.9 0.1 2.1 0.1 1.25 0.1 0 to 0.1 (0.15) (0.425) 5? 5? +0.1 ? 0.15 +0.1 ?.05 parameter symbol rating unit reverse voltage v r 80 v maximum peak reverse voltage v rm 80 v forward current single i f 100 ma double 150 peak forward single i fm 225 ma current double 340 non-repetitive peak single i fsm 500 ma forward surge current * double 750 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c d e eiaj: sc-79 smini3-f1 package
2 ma3j142d, ma3j142e skf00018bed i f ? v f i r ? v r v f ? t a i r ? t a c t ? v r i f(surge) ? t w characteristics charts of ma3j142d 10 ? 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 150 c 100 c 25 c ? 20 c 10 ? 1 0 20 40 60 80 100 120 1 10 10 2 10 3 10 4 reverse voltage v r ( v ) reverse current i r ( na ) t a = 150 c 25 c 100 c 0 0.4 0.8 1.2 1.6 ? 40 0 40 80 120 160 200 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 100 ma 10 ma 3 ma 10 ? 1 ? 40 0 40 80 120 160 200 1 10 10 2 10 3 10 4 ambient temperature t a ( c ) reverse current i r ( na ) 35 v 6 v v r = 75 v 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c 10 ? 1 1 10 10 2 10 3 10 1 10 ? 1 pulse width t w (ms) forward surge current i f(surge) (a) t w non repetitive i f(surge) t a = 25 c
ma3j142d, ma3j142e 3 skf00018bed characteristics charts of ma3j142e i f ? v f i r ? v r v f ? t a i r ? t a c t ? v r i f(surge) ? t w 10 ? 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 150 c 100 c 25 c ? 20 c 1 0 20 40 60 80 100 120 10 10 2 10 3 10 4 10 5 reverse voltage v r ( v ) reverse current i r ( na ) t a = 150 c 25 c 100 c 0 0.4 0.8 1.2 1.6 ? 40 0 40 80 120 160 200 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 100 ma 10 ma 3 ma 1 ? 40 0 40 80 120 160 200 10 10 2 10 3 10 4 10 5 ambient temperature t a ( c ) reverse current i r ( na ) 35 v 6 v v r = 75 v 0 1.2 1.0 0.8 0.6 0.4 0.2 0 20406080100120 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c 10 ? 1 1 10 10 2 10 3 10 1 10 ? 1 pulse width t w ( ms ) forward surge current i f(surge) ( a ) t w non repetitive i f(surge) t a = 25 c
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