Part Number Hot Search : 
0134A 1N415 550T009M PE7100 070C240 LT9525D 2053BTDB 74AHCT1
Product Description
Full Text Search
 

To Download SI4442DY Datasheet File
  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
　
 

  Datasheet File OCR Text:
  SI4442DY vishay siliconix document number: 71358 s-40843?rev. c, 03-may-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) (  ) i d (a) 0.0045 @ v gs = 10 v 22 30 0.005 @ v gs = 4.5 v 19 0.0075 @ v gs = 2.5 v 17 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet ordering information: SI4442DY SI4442DY-t1 (with tape and reel) SI4442DY?e3 (lead free) SI4442DY -t1?e3 (lead free with tape and reel) absolute maximum ratings (t a = 25  c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source v oltage v gs  12 v continuous drain current (t j = 150  c) a t a = 25  c i d 22 15 continuous drain current (t j = 150  c) a t a = 70  c i d 17 11 a pulsed drain current (10  s pulse width) i dm 60 a continuous source current (diode conduction) a i s 2.9 1.3 maximum power dissipation a t a = 25  c p d 3.5 1.6 w maximum power dissipation a t a = 70  c p d 2.2 1 w operating junction and storage temperature range t j , t stg ? 55 to 150  c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t  10 sec r 29 35 maximum junction-to-ambient a steady state r thja 67 80  c/w maximum junction-to-foot (drain) steady state r thjf 13 16 notes a. surface mounted on 1? x 1? fr4 board. .com .com .com .com 4 .com u datasheet
SI4442DY vishay siliconix www.vishay.com 2 document number: 71358 s-40843?rev. c, 03-may-04 specifications (t j = 25  c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250  a 0.6 1.5 v gate-body leakage i gss v ds = 0 v, v gs =  12 v  100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1  a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55  c 5  a on-state drain current a i d(on) v ds  5 v, v gs = 10 v 30 a v gs = 10 v, i d = 22 a 0.0035 0.0045 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 19 a 0.0041 0.005  v gs = 2.5 v, i d = 17 a 0.0062 0.0075 forward t ransconductance a g fs v ds = 15 v, i d = 22 a 100 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g 36 50 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 22 a 8 nc gate-drain charge q gd 10.5 gate resistance r g 0.5 1.5 2.6  turn-on delay time t d(on) 17 30 rise time t r v dd = 15 v, r l = 15  11 20 turn-off delay time t d(off) v dd = 15 v , r l = 15  i d  1 a, v gen = 10 v, r g = 6  125 180 ns fall time t f 47 70 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/  s 50 80 notes a. pulse test; pulse width  300  s, duty cycle  2%. b. guaranteed by design, not subject to production testing. typical characteristics (25  c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 012345 v gs = 5 thru 2.5 v 25  c t c = 125  c ? 55  c 2 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 1.5 v .com .com .com .com .com 4 .com u datasheet
SI4442DY vishay siliconix document number: 71358 s-40843?rev. c, 03-may-04 www.vishay.com 3 typical characteristics (25  c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 0.000 0.002 0.004 0.006 0.008 0.010 0 102030405060 0 2 4 6 8 10 0 20406080100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 0 6 12 18 24 30 c rss c oss c iss v ds = 15 v i d = 22 a v gs = 4.5 v i d = 22 a v gs = 4.5 v v gs = 2.5 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on)  ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature (  c) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25  c t j = 150  c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s i d = 22 a on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on)  ) v gs ? gate-to-source voltage (v) r ds(on) ? on-resiistance (normalized) .com .com .com .com .com 4 .com u datasheet
SI4442DY vishay siliconix www.vishay.com 4 document number: 71358 s-40843?rev. c, 03-may-04 typical characteristics (25  c unless noted) 0 30 60 10 20 power (w) single pulse power time (sec) 40 50 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effec tive transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 67  c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 ? 1 10 ? 2 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250  a threshold voltage variance (v) v gs(th) t j ? temperature (  c) .com .com .com .com 4 .com u datasheet


▲Up To Search▲   

 
Price & Availability of SI4442DY
Newark

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
06J7735		 Vishay Intertechnologies N Channel Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600Mv; Power Dissipation:3.5W Rohs Compliant: Yes |Vishay SI4442DY-T1-E3 50: USD2
 BuyNow
0
SI4442DY-T1-E3
35K3465		 Vishay Intertechnologies N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:3.5W Rohs Compliant: Yes |Vishay SI4442DY-T1-E3 20000: USD1.46
12000: USD1.48
8000: USD1.54
4000: USD1.65
2000: USD1.78
 BuyNow
0
SI4442DY-T1-GE3
84R8050		 Vishay Intertechnologies N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:1.6W Rohs Compliant: Yes |Vishay SI4442DY-T1-GE3 1: USD1.93
 BuyNow
0
SI4442DY-T1-GE3
15R5019		 Vishay Intertechnologies N Channel Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:1.6W Rohs Compliant: Yes |Vishay SI4442DY-T1-GE3 20000: USD1.46
12000: USD1.48
8000: USD1.54
4000: USD1.65
2000: USD1.78
 BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
SI4442DY-T1-E3TR-ND		 Vishay Siliconix MOSFET N-CH 30V 15A 8SO 5000: USD1.4125
2500: USD1.47228
 BuyNow
5000
SI4442DY-T1-E3
SI4442DY-T1-E3CT-ND		 Vishay Siliconix MOSFET N-CH 30V 15A 8SO 1000: USD1.56358
500: USD1.82608
100: USD2.0543
10: USD2.539
1: USD3.02
 BuyNow
1359
SI4442DY-T1-E3
SI4442DY-T1-E3DKR-ND		 Vishay Siliconix MOSFET N-CH 30V 15A 8SO 1000: USD1.56358
500: USD1.82608
100: USD2.0543
10: USD2.539
1: USD3.02
 BuyNow
0
SI4442DY-T1-GE3
SI4442DY-T1-GE3-ND		 Vishay Siliconix MOSFET N-CH 30V 15A 8SO 5000: USD1.4125
2500: USD1.47228
 BuyNow
0

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-GE3
SI4442DY-T1-GE3		 Vishay Intertechnologies Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4442DY-T1-GE3) 250000: USD1.13157
25000: USD1.19024
20000: USD1.24892
15000: USD1.29921
10000: USD1.34531
5000: USD1.39141
2500: USD1.43751
 BuyNow
0
SI4442DY-T1-E3
SI4442DY-T1-E3		 Vishay Intertechnologies Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4442DY-T1-E3) 250000: USD0.74048
25000: USD0.77887
20000: USD0.81727
15000: USD0.85018
10000: USD0.88034
5000: USD0.91051
2500: USD0.94068
 BuyNow
0

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
V72:2272_09215567		 Vishay Intertechnologies Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R 1000: USD0.9235
500: USD0.989
250: USD1.0707
100: USD1.0918
50: USD1.1991
25: USD1.2112
10: USD1.2234
1: USD1.3207
 BuyNow
1815

RS

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
70026220		 Vishay Siliconix MOSFET; 30V N-Channel @2.5V | Siliconix / Vishay SI4442DY-T1-E3 2500: USD2.55
25000: USD2.42
125000: USD2.29
250000: USD2.16
 RFQ
0

Verical

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
69705195		 Vishay Intertechnologies Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R 1000: USD0.9235
500: USD0.989
250: USD1.0707
100: USD1.0918
50: USD1.1991
25: USD1.2112
10: USD1.2234
8: USD1.3207
 BuyNow
1815

Bristol Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
 Vishay Intertechnologies RFQ
243

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
 Vishay Intertechnologies SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA (Also Known As: SI4442DY) 815: USD2.235
364: USD2.4585
1: USD4.47
 BuyNow
1286
SI4442DY-T1-E3
 Vishay Intertechnologies SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA 815: USD2.235
364: USD2.4585
1: USD4.47
 BuyNow
1286
SI4442DY-T1-E3
 Vishay Intertechnologies SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA (Also Known As: SI4442DY) 723: USD2.52
323: USD2.772
1: USD5.04
 BuyNow
1936
SI4442DY-T1-E3
 Vishay Intertechnologies SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA 723: USD2.52
323: USD2.772
1: USD5.04
 BuyNow
1936
SI4442DY-T1-E3
 Vishay Intertechnologies SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA (Also Known As: SI4442DY) 71: USD3.3078
20: USD3.576
1: USD5.364
 BuyNow
194

TTI

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
SI4442DY-T1-E3		 Vishay Intertechnologies MOSFETs 30V 22A 3.5W 2500: USD1.01
5000: USD0.98
10000: USD0.94
20000: USD0.85
 BuyNow
0
SI4442DY-T1-GE3
SI4442DY-T1-GE3		 Vishay Intertechnologies MOSFETs 30V 22A 3.5W 4.5mohm @ 10V 2500: USD1.44
5000: USD1.39
10000: USD1.35
 BuyNow
0

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DYT1
 Vishay Intertechnologies Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RFQ
340

Velocity Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY
 Vishay Siliconix Our Stock RFQ
94

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
 INSTOCK RFQ
105

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1
 Vishay Intertechnologies RFQ
6438
SI4442DY-TI-E3
 Vishay Intertechnologies RFQ
7
SI4442DY-T1-E3
 Vishay Siliconix RFQ
16
SI4442DY-T1-E3
 MFG UPON REQUEST RFQ
2800
SI4442DY-T1-E3
 Vishay Intertechnologies RFQ
14571

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SI4442DY-T1-E3
 Vishay Intertechnologies SI4442DY-T1-E3 RFQ
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X