2sc5949 2005-07-27 1 toshiba transistor silicon npn triple diffused type 2sc5949 power amplifier applications ? p c = 220w ? complementary to 2sa2121 maximum ratings (tc = 25c) characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 5 v collector current i c 15 a base current i b 1.5 a collector power dissipation p c 220 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-21f1a weight: 9.75 g (typ.)
2sc5949 2005-07-27 2 electrical characteristics (tc = 25c) characteristic symbol test conditions min typ. max unit collector cut-off current i cbo v cb = 200 v, i e = 0 D D 5.0 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 5.0 a collector-emitter breakdown voltage v (br) ceo i c = 50 ma, i b = 0 200 D D v h fe (1) (note 1) v ce = 5 v, i c = 1 a 55 D 160 dc current gain h fe (2) v ce = 5 v, i c = 8 a 35 60 D collector-emitter saturation voltage v ce (sat) i c = 10 a, i b = 1 a D 0.4 3.0 v base-emitter voltage v be v ce = 5 v, i c = 8 a D 1.0 1.5 v transition frequency f t v ce = 5 v, i c = 1 a D 30 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 270 D pf note 1: h fe(1) classification r: 55 to 110, o: 80 to 160 marking 2sc5949 toshiba japan lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) characteristisc indicator
2sc5949 2005-07-27 3 12 0 8 12 16 20 4 6 8 10 0 2 4 0.1 5 10 1000 0.03 30 10 10 1 10 1 0.1 0.01 100 i c ? v ce i c ? v be hfe ? i c v ce (sat) ? i c f t ? i c 0.5 0 8 12 16 0 1.0 2.5 100 1000 0.1 1 10 10 100 0.1 1 ?I 100 4 1.5 2.0 300 500 30 50 1 3 0.3 0.1 0.03 30 10 1 3 0.3 0.01 2 0.3 0.5 1 0.1 0.03 0.05 i b = 20 ma common emitter tc = 25c 500 400 200 300 100 50 tc = 100c 25 ? 25 common emitter v ce = 5 v tc = 100c 25 ? 25 common emitter v ce = 5 v tc = 100c 25 ? 25 common emitter i c / i b = 10 v common emitter tc = 25c v ce = 5 v v ceo max *:single non-repetitive pulse tc = 2 5 c curves must be de-rated linearly with increase in temperature. 1 ms * i c max (pulsed) * 10 ms * i c max (continuous) dc operation tc = 25c 100 ms * transition frequency f t (mhz) collector-emitter voltage v ce (v) collector current i c (a) base-emitter voltage v be (v) collector current i c (a) collector current i c (a) dc current gain h fe collector current i c (a) collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector-emitter voltage v ce (v)
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