2sk213, 2SK214, 2sk215, 2sk216 silicon n-channel mos fet ade-208-1241 (z) 1st. edition mar. 2001 application high frequency and low frequency power amplifier, high speed switching. complementary pair with 2sj76, j77, j78, j79 features suitable for direct mounting high forward transfer admittance excellent frequency response enhancement-mode outline 1 2 3 to-220ab 1. gate 2. source (flange) 3. drain d g s
2sk213, 2SK214, 2sk215, 2sk216 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage 2sk213 v dsx 140 v 2SK214 160 2sk215 180 2sk216 200 gate to source voltage v gss ?5 v drain current i d 500 ma body to drain diode reverse drain current i dr 500 ma channel dissipation pch 1.75 w pch* 1 30 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? note: 1. value at t c = 25? electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source 2sk213 v (br)dsx 140 v i d = 1 ma, v gs = ? v breakdown voltage 2SK214 160 v 2sk215 180 v 2sk216 200 v gate to source breakdown voltag v (br)gss ?5 v i g = ?0 ?, v ds = 0 gate to source voltage v gs(on) 0.2 1.5 v i d = 10 ma, v ds = 10 v * 1 drain to source saturation voltage v ds(sat) 2.0 v i d = 10 ma, v gd = 0 * 1 forward transfer admittance |y fs |2040 msi d = 10 ma, v ds = 20 v * 1 input capacitance ciss 90 pf i d = 10 ma, v ds = 10 v, reverse transfer capacitance crss 2.2 pf f = 1 mhz note: 1. pulse test
2sk213, 2SK214, 2sk215, 2sk216 3 50 100 0 case temperature t c (?) 150 20 channel dissipation pch (w) power vs. temperature derating 40 60 100 200 300 typical output characteristics 12 400 500 drain to source voltage v ds (v) t c = 25? 3.0 v gs = 0.5 v 2.5 2.0 1.5 1.0 3.5 drain current i d (ma) 16 8 4 020 typical output characteristics 0.8 v gs = 0.1v t c = 25? 10 20 30 60 40 50 drain to source voltage v ds (v) drain current i d (ma) 80 40 20 0 100 0.7 0.6 0.5 0.4 0.3 0.2 t c = ?5? 25 75 typical transfer characteristics 3 gate source voltage v gs (v) 4 2 1 05 100 200 300 400 500 drain current i d (ma) 0 v ds = 20 v
2sk213, 2SK214, 2sk215, 2sk216 4 t c = ?5? 25 75 typical transfer characteristics 1.2 gate source voltage v gs (v) 1.6 0.8 0.4 0 2.0 20 40 60 80 100 drain current i d (ma) 0 v ds = 20 v forward transfer admittance vs. drain current t c = 25? v ds = 20 v 50 drain current i d (ma) 100 10 5 2 200 10 20 50 100 200 forward transfer admittance ? yfs ? (ms) 5 20 100 10 k 100 k 1.0 10 forward transfer admittance ? yfs ? (ms) forward transfer admittance vs. frequency 1 m 500 50 m 0.05 5 k 0.1 frequency f (h z ) 10 m t c = 25? v ds = 20 v i d = 10 ma
2sk213, 2SK214, 2sk215, 2sk216 5 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?.1 f 3.6 +0.1 -0.08 hitachi code jedec eiaj mass (reference value) to-220ab conforms conforms 1.8 g as of january, 2001 unit: mm
2sk213, 2SK214, 2sk215, 2sk216 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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