 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| tm january 2007 FDMA530PZ single p-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDMA530PZ rev.b www.fairchildsemi.com 1 FDMA530PZ single p-channel powertrench ? mosfet ? 30v, ? 6.8a, 35m features ? max r ds(on) = 35m at v gs = ?10v, i d = ?6.8a ? max r ds(on) = 65m at v gs = ?4.5v, i d = ?5.0a ? low profile - 0.8mm maximum - in the new package microfet 2x2 mm ? rohs compliant general description this device is designed specifical ly for battery charge or load switching in cellular handset and other ultraportable applications . it features a mosf et with low on-state resistance. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?30 v v gs gate to source voltage 25 v i d drain current -continuous (note 1a) ?6.8 a -pulsed ?24 p d power dissipation (note 1a) 2.4 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 530 FDMA530PZ microfet 2x2 7?? 8mm 3000 units 5 1 6 2 3 4 d d s d d g bottom drain contact d d s g d d pin 1 drain source microfet 2x2 (bottom view)
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 a, v gs = 0v ?30 v bv dss t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?23 mv/ c i dss zero gate voltage drain current v ds = ?24v, v gs = 0v -1 a i gss gate to source leakage current v gs = 25v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 a ?1 ?2.1 ?3 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 5.4 mv/ c r ds(on) static drain to source on resistance v gs = ?10v, i d = ?6.8a 30 35 m v gs = ?4.5v, i d = ?5.0a 52 65 v gs = ?10v, i d = ?6.8a ,t j = 125 c 43 63 g fs forward transconductance v ds = ?10v, i d = ?6.8a 17 s dynamic characteristics c iss input capacitance v ds = ?15v, v gs = 0v, f = 1mhz 805 1070 pf c oss output capacitance 155 210 pf c rss reverse transfer capacitance 130 195 pf switching characteristics t d(on) turn-on delay time v dd = ?15v, i d = ?6.8a v gs = ?10v, r gen = 6 6 12 ns t r rise time 21 34 ns t d(off) turn-off delay time 43 69 ns t f fall time 31 50 ns q g total gate charge v gs = ?10v v dd = ?15v i d = ?6.8a 16 24 nc q g total gate charge v gs = ?5v 9 11 nc q gs gate to source gate charge 3.1 nc q gd gate to drain ?miller? charge 4.5 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?2 a v sd source to drain diode forward voltage v gs = 0v, i s = ?2a ?0.8 ?1.2 v t rr reverse recovery time i f = ?6.8a, di/dt = 100a/ s 24 36 ns q rr reverse recovery charge 19 29 nc notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3: the diode connected between the gate and the source serves only as protection against esd. no gate overvoltage rating is implie d. a. 52c/w when mounted on a 1 in 2 pad of 2 oz copper b.145c/w when mounted on a minimum pad of 2 oz copper FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 4 8 12 16 20 24 v gs = - 4.0v v gs = - 3.5v v gs = - 4.5v v gs = -10v pulse duration = 80 s duty cycle = 0.5%max v gs = - 5.0v - i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 04812162024 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = -5.0v v gs = -4.0v v gs = -10v v gs = -4.5v v gs = -3.5v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 1.8 i d = -6.8a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 50 100 150 200 pulse duration = 80 s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -3.4a r ds(on) , drain to source on-resistance ( m ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 123456 0 6 12 18 24 v dd = -5v pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.40.81.21.6 0.0001 0.001 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.b www.fairchildsemi.com 4 figure 7. 0 3 6 9 12 15 18 0 2 4 6 8 10 i d = -6.8a v dd = -15v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -20v gate charge characteristics figure 8. 0.1 1 10 100 1000 2000 50 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0 5 10 15 20 25 30 35 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 v gs = 0v t j = 25 o c t j = 125 o c -v gs , gate to source voltage(v) -i g , gate leakage current(a) g a t e l e a k a g e c u r r e n t v s g a t e t o s o u r c e v o l t a g e figure 10. 0.1 1 10 100 0.01 0.1 1 10 v gs = -4.5v single pulse r ja = 145 o c/w t a = 25 o c 1s dc 10s 100ms 10ms 1ms 100us r ds(on) limit -i d , drain current (a) -v ds , drain to source voltage (v) 60 f o r w a r d b i a s s a f e operating area figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0 30 60 90 120 150 single pulse r ja = 145 o c/w t a =25 o c p ( pk ) , peak transient power (w) t, pulse width (s) s i n g l e p u l s e m a x i m u m power dissipation f i g u r e 1 2 . t r a n s i e n t t h e r m a l response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25c unless otherwise noted FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.b www.fairchildsemi.com 5 notes: a. not fully conform to jedec registration mo-229 dated aug/2003. b. dimensions are in millimeters. c. dimensions and tolerances per asme y14.5m,1994 mlp06lreva FDMA530PZp rev. b www.fairchildsemi.com 6 FDMA530PZ single p-channel powertrench ? mosfet rev. i22 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. |
Price & Availability of FDMA530PZ
 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
